采用噪声抵消技术的高增益CMOS宽带LNA设计  

A high gain CMOS wideband LNA with noise cancelling

作　　者：董叶梓[1,2] 张鹏[1] 毛陆虹[2] 

机构地区：[1]国家海洋技术中心,天津300112 [2]天津大学电子信息工程学院,天津300072

出　　处：《电子技术应用》2013年第5期44-47,50,共5页Application of Electronic Technique

摘　　要：设计了一种面向多频段应用的CMOS宽带低噪声放大器。采用噪声抵消技术以及局部负反馈结构,引入栅极电感补偿高频的增益损失,电路具有高增益、低噪声的特点,并且具有平坦的通带增益。设计采用UMC 0.18μm工艺,后仿真显示:在1.8 V供电电压下,LNA的直流功耗约为9.45 mW,电路的最大增益约为23 dB,3 dB频带范围为0.1 GHz^1.35 GHz,3 dB带宽内的噪声约为1.7 dB^5 dB;在1 V供电电压下,电路依然能够保持较高的性能。A CMOS wideband low noise amplifier is presented for multi-standard applications. Noise cancelling and local feed- back are used in this design, as well as a gate inductor is used in order to compensate the gain loss at high frequency. These lead to a LNA with high gain and low noise, and achieve a fiat gain in pass-band. The design is realized with UMC 0.18 μm process. According to the post simulation result： Consuming 9.45 mW from a 1.8 V supply, the LNA achieves a maximum power gain of 23 dB and a NF of 1.7 dB-5 dB over a 3 dB bandwidth of 0.1 GHz-1.35GHz; and under a 1V supply, the circuit can remain a good performance.

关 键 词：宽带低噪声放大器 噪声抵消技术 局部反馈 电感补偿 CMOS集成电路 

分 类 号：TN432[电子电信—微电子学与固体电子学]