ECR Plasma CVD淀积光电器件介质膜的工艺模拟  

Simulation based prediction of dielectric thin film deposition by ECR plasma CVD for optoelectronic devices

作　　者：谭满清[1] 陆建祖[1] 李玉鉴[1] 

机构地区：[1]中国科学院半导体研究所工程中心,北京100083

出　　处：《功能材料与器件学报》2000年第3期248-251,共4页Journal of Functional Materials and Devices

基　　金：863资助项目!307-15-3(08)

摘　　要：以实验数据为基础,运用人工神经网络方法,建立了电子回旋共振等离子体化学气相沉积(ECRPlasmaCVD)淀积硅的氮、氧化物介质膜的折射率、速率与气流配比Q(N2)/Q(SiH4)和Q(O2)/Q(SiH4)关系的数学模型,此模型在给定气流配比Q(N2)/Q(SiH4)和Q(O2)/Q(SiH4)时所预测的成模折射率跟实验值符合得很好,为ECRPlasmaCVD淀积全介质光学膜的工艺打下坚实的基础。Based on experiment result, a mathematical model has been established in this paper for the relation between refractive index n and deposition ratio V of silicon oxide or nitride and gas ratio Q(N2)/Q(SiH4), Q(O2)/Q(SiH4) by artificial neural network. A good prediction is made for the refractive index n and depositon ratio V by the model when gas ratio Q(N2)/Q(SiH4), Q(O2)/Q(SiH4) are given. And the model is basic of simulatin for all dielectric optical coatings deposition by ECR plasma CVD.

关 键 词：ECRPlasmaCVD 光电器件介质膜 工艺模拟 沉积 

分 类 号：TN304.055[电子电信—物理电子学]