Preparation of GaN-on-Si based thin-film flip-chip LEDs  

作　　者：章少华 封波 孙钱 赵汉民 

机构地区：[1]School of Materials Science and Technology,Nanchang University [2]Lattice Power(Jiangxi) Corporation

出　　处：《Journal of Semiconductors》2013年第5期35-37,共3页半导体学报（英文版）

摘　　要：GaN based MQW epitaxial layers were grown on Si （111） substrate by MOCVD using AIN as the buffer layer. High light extraction LEDs were prepared by substrate transferring technology in combination with thin-film and flip-chip design. The blue and white 1.1 × 1.1 mm2 LED lamps are measured. The optical powers and external quantum efficiency for silicone encapsulated blue lamp are 546 mW, and 50.3% at forward current of 350 mA, while the photometric light output for a white lamp packaged with standard YAG phosphor is 120.1 lm.GaN based MQW epitaxial layers were grown on Si （111） substrate by MOCVD using AIN as the buffer layer. High light extraction LEDs were prepared by substrate transferring technology in combination with thin-film and flip-chip design. The blue and white 1.1 × 1.1 mm2 LED lamps are measured. The optical powers and external quantum efficiency for silicone encapsulated blue lamp are 546 mW, and 50.3% at forward current of 350 mA, while the photometric light output for a white lamp packaged with standard YAG phosphor is 120.1 lm.

关 键 词：silicon substrate GAN flip chip LED 

分 类 号：TN304[电子电信—物理电子学]