A THz InGaAs/InP double heterojunction bipolar transistor with f_(max)=325 GHz and BV_(CBO)=10.6 V  

作　　者：程伟 王元 赵岩 陆海燕 高汉超 杨乃彬 

机构地区：[1]Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute

出　　处：《Journal of Semiconductors》2013年第5期76-78,共3页半导体学报（英文版）

摘　　要：A common-base four finger InGaAs/InP double heterostructure bipolar transistor （DHBT） has been designed and fabricated using triple mesa structure and planarization technology. All processes are on 3-inch wafers. The area of each emitter finger is 1 × 15 μm2. The maximum oscillation frequency （fmax） is 325 GHz and the breakdown voltage BV_CBO is 10.6 V, which are to our knowledge both the highest fmax and BV_CBo ever reported for InGaAs/InP DHBTs in China. The high speed InGaAs/InP DHBT with a high breakdown voltage is promising for submillimeter-wave and THz electronics.A common-base four finger InGaAs/InP double heterostructure bipolar transistor （DHBT） has been designed and fabricated using triple mesa structure and planarization technology. All processes are on 3-inch wafers. The area of each emitter finger is 1 × 15 μm2. The maximum oscillation frequency （fmax） is 325 GHz and the breakdown voltage BV_CBO is 10.6 V, which are to our knowledge both the highest fmax and BV_CBo ever reported for InGaAs/InP DHBTs in China. The high speed InGaAs/InP DHBT with a high breakdown voltage is promising for submillimeter-wave and THz electronics.

关 键 词：InP DHBT THZ high breakdown 

分 类 号：TN322.8[电子电信—物理电子学]