PECVD提高SiO_2薄膜致密性的研究  

Study on Improving the Compactness of SiO_2 Thin Film by PECVD

作　　者：郭文涛[1] 谭满清[1] 焦健[1] 郭小峰[1] 孙宁宁[1] 

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083

出　　处：《人工晶体学报》2013年第4期577-581,共5页Journal of Synthetic Crystals

摘　　要：为了在高功率980 nm激光器工艺中制备高质量、均匀性好、致密性高的SiO2薄膜,本文研究了PECVD的反应压强、射频功率、SiH4与N2O流量比对SiO2薄膜的沉积速率和BOE腐蚀速率的影响。实验采用BOE腐蚀速率来反映SiO2薄膜的致密性,采用傅里叶红外光谱仪得到SiO2薄膜的红外吸收特性,采用原子力显微镜(AFM)观察SiO2薄膜的表面形貌。通过优化各工艺参数最终获得了BOE腐蚀速率为9.18 nm/s的SiO2薄膜。In order to deposit high quality, good uniformity, and high compactness SiO2 thin film by plasma enhanced chemical vapor deposition （ PECVD）, the deposition rate and the BOE etch rate of SiO2 thin film affected by working pressure, RF power, and Sill4 flow rate were studied. In experiments, the compactness of SiO2 thin film was determined by the BOE etch rate. High compactness （ the lowest BOE etch rate of 9.18 nm/s） SiO2 thin film was achieved by the increasing RF power and Sill4 flow rate with the lower working pressure. These results were supported by the infrared absorption characteristics and the surface morphology of the samples.

关 键 词：PECVD SIO2薄膜 致密性 BOE腐蚀速率 

分 类 号：O484.5[理学—固体物理]