GaAs纳米薄膜的分步电沉积制备及表征  

Preparation and Characterization of Nano GaAs Thin Films by a Two-step Electrodeposition Method

作　　者：李龙[1,2] 章海霞[1,2] 刘晶[1,2] 马淑芳[1,2] 梁建[1,2] 许并社[1,2] 

机构地区：[1]太原理工大学新材料界面科学与工程教育部重点实验室,太原030024 [2]太原理工大学材料科学与工程学院,太原030024

出　　处：《人工晶体学报》2013年第4期601-606,610,共7页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51002102);山西省回国留学人员重点科研资助项目(2009-03)

摘　　要：采用分步电化学沉积法,在FTO玻璃基底上成功制备出GaAs薄膜。采用高分辨X射线衍射仪(HRXRD)、场发射扫描电镜(FESEM)、紫外可见光光度计(UV-Vis)、荧光光度计(PL)对不同退火工艺下所制备的薄膜的晶体结构、形貌及光学性能进行表征。结果表明:GaAs薄膜为面心立方晶系,沿(111)方向择优生长。随着退火温度的升高,薄膜内颗粒逐渐增大,Ga与As原子量比发生变化,Eg值减小,光致发光峰为红外发射峰。同时对其形成机理进行了探讨。GaAs thin films were successfully fabricated on FTO glass substrate by two-step electrodeposition method. Crystallographic structure, morphology and optical properties of the films before and after annealing in different temperatures were characterized by HRXRD, FESEM, UV-Vis and PL. The results show that the GaAs films are cubic phase and preferred orientation is （111 ） plane. The grains increase as the annealing temperature increasing, the ratio of Ga and As also changes, and the forbidden gap decreases. The PL spectra shows red fluorescen phenomenon. A reasonable formation mechanism is also discussed.

关 键 词：GaAs薄膜 电沉积 退火 

分 类 号：O484[理学—固体物理]