半导体中深能级的晶格弛豫效应  

Effects of Lattice Relaxation on Deep Levels in Semiconductors

作　　者：张跃[1] 

机构地区：[1]湖南师范大学物理与信息科学学院,中国长沙410081

出　　处：《湖南师范大学自然科学学报》2013年第2期28-34,共7页Journal of Natural Science of Hunan Normal University

基　　金：湖南师范大学科学研究项目(29000631)

摘　　要：基于Hjalmarson等人提出的理论,研究了有关Si,Ge以及GaP的深能级的最近邻和次最近邻晶格弛豫效应.对Baranowski提出的计算紧束缚非对角元的近似估算模型作了合理的修正,采用Harrison提出的与最近邻原子的键长的平方成反比例的规则以及修正的Baranowski模型,进行了大量的数值计算.对于含多种杂质的Si,Ge和GaP半导体材料,文中还对利用不同的理论模型分别计算出的深能级及实验测量结果的误差作了比较.On the basis of the theory proposed by Hjalmarson et al, the nearestneighbor and the second nearestneighbor lattice relaxation effects associated with the deep levels in Si, Ge and GaP are studied. For the convenience of applications, the paper appropriately revises the formulas of Baranowskis approximate estimation model for calculating the tightbinding offdiagonal matrix element, and performs a great deal of numerical computations respectively by use of Harrisons inverse bondlengthsquared scaling law and the revised Baranowskis model. With respect to the deep levels associated with various impurities in Si, Ge and GaP, the theoretical results coming from a few different models are given, and compared with the experimental data as well.

关 键 词：最近邻晶格弛豫 次最近邻晶格弛豫 键长变化 Harrison规则 Baranowski模型 

分 类 号：O474[理学—半导体物理]