微电子封装中焊点的电迁移现象分析与研究  

Analysis and Research on Electro-Migration Phenomenon in Solder Joints for Microelectronics Packaging

作　　者：房加强[1] 于治水[1] 苌文龙[1] 王波[1] 姜鹤明[1] 

机构地区：[1]上海工程技术大学材料工程学院,上海201620

出　　处：《上海工程技术大学学报》2013年第1期76-81,共6页Journal of Shanghai University of Engineering Science

基　　金：上海工程技术大学研究生科研创新资助项目(2011yjs20)

摘　　要：综述了当前对微电子封装中焊点的电迁移现象及其影响因素的研究现状,分析了电流密度、温度和合金成分对电迁移失效过程的影响,以及电迁移对焊点力学性能、疲劳强度和焊点断裂机制的影响.研究发现,电迁移显著降低焊点的力学性能,对微焊点平均拉伸强度的影响存在尺寸效应,明显地降低了微焊点的振动疲劳寿命,且电迁移使微焊点的断裂机制由塑性断裂转向脆性断裂.The current research status of electro-migration phenomenon in solder joints for microelectronics packaging and its influential factors was summarized. The effects of current density, temperature and alloy composition on electro-migration failure process and the effects of electro- migration on mechanical properties, fatigue strength and fracture mechanism of solder joints were analyzed. The study shows that the electro-migration can significantly reduce the mechanical properties of the solder joint, present an obvious size effect on the average tensile strength of the micro solder joints,significantly reduce the vibration fatigue life of the micro-solder joints, and convert the fracture mechanism of micro-solder joints from plastic fracture to brittle fracture.

关 键 词：微电子封装 电迁移 金属间化合物 断裂失效 

分 类 号：TN305.94[电子电信—物理电子学]