偏置条件对NPN及PNP双极晶体管电离辐射损伤的影响研究  

The influence of bias conditions on ionizing radiation damage of NPN and PNP transistors

作　　者：李兴冀[1] 兰慕杰[2] 刘超铭[1] 杨剑群[1] 孙中亮[1] 肖立伊[2] 何世禹[1] 

机构地区：[1]哈尔滨工业大学材料科学与工程学院,哈尔滨150001 [2]哈尔滨工业大学航天学院,哈尔滨150001

出　　处：《物理学报》2013年第9期477-482,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:11205038);中国博士后科学基金(批准号:2012M510951)资助的课题~~

摘　　要：本文采用低能电子辐照源对NPN及PNP晶体管进行辐照试验.在辐照试验过程中,针对NPN及PNP晶体管发射结施加不同的偏置条件,研究偏置条件对NPN及PNP晶体管辐射损伤的影响.使用Keithley4200-SCS半导体特性测试仪在原位条件下测试了双极晶体管电性能参数随低能电子辐照注量的变化关系.测试结果表明,在相同的辐照注量条件下,发射结反向偏置时双极晶体管的辐照损伤程度最大;发射结正向偏置时双极晶体管的辐照损伤程度最小;发射结零偏时双极晶体管的辐照损伤程度居于上述情况之间.Bipolar junction transistors （BJTs）, as important electronic components in analog or mixed-signal integrated circuits （ICs） and BiCMOS （Bipolar Complementary Metal Oxide Semiconductor） circuits, are employed in the space environment. Therefore, the research on characteristics and mechanisms of ionization damage in the BJTs is very important. Lower energy electrons are used as irradiation source to study the ionization damage in NPN and PNP transistors. Various bias conditions are imposed on the emitter-base junction to reveal the different bias conditions that contribute to the radiation effect on NPN and PNP transistors during irradiation processing. The semiconductor parameter analyzer, Keithley 4200-SCS, is used to measure the change of electrical parameters of transistors with increasing electron irradiation fluence in situ. Based on the measurement results, we find the degradation of transistors is severe under reverse emitter-base bias, and is lowest under forward emitter-base bias, while it is medium under zero emitter-base bias at a given irradiation fluence.

关 键 词：双极晶体管 低能电子 电离辐射 

分 类 号：TN322.8[电子电信—物理电子学]