磁控溅射沉积铝/贫铀与金/贫铀镀层的界面研究  

Study on interface of Al/depleted uranium and Au/depleted uranium layers deposited by magnetron sputtering

作　　者：易泰民[1] 邢丕峰[1] 郑凤成[1] 梅鲁生[1] 杨蒙生[1] 赵利平[1] 李朝阳[1] 谢军[1] 杜凯[1] 马坤全[1] 

机构地区：[1]中国工程物理研究院激光聚变研究中心,绵阳621900

出　　处：《物理学报》2013年第10期392-398,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:51006093)资助的课题~~

摘　　要：采用磁控溅射技术沉积制铝/贫铀/铝(Al/DU/Al)、金/贫铀/金(Au/DU/Au)"三明治"薄膜样品.利用高分辨扫描电镜、X射线衍射仪、X射线光电子能谱仪、扫描俄歇微探针对Al/DU/Al,Au/DU/Au样品的Al/DU,Au/DU界面行为进行表征与研究.结果表明:沉积态DU层以柱状晶生长;Al/DU界面扩散明显,物理扩散过程中伴随着Al,DU化学反应形成Al2U,Al3U金属化合物;金属化合物的形成导致界面处Al2p电子结合能向高能端移动,U4f电子向低能端移动;微量O在Al/DU界面处以Al2O3及铀氧化物形式存在;DU镀层中以铀氧化形式存在;沉积态的Au/DU界面扩散为简单的物理扩散,团簇效应导致Au/DU界面处Al2p,U4f电子结合能均向高能端移动;在Au/DU界面及DU镀层中,微量O以铀氧化物形式存在;Al/DU界面扩散强于Au/DU;相同厚度的Al,Au保护镀层,Al镀层保护效果优于Au镀层.Aluminum/depleted uranium/aluminum（Al/DU/Al）and gold/depleted uranium/gold（Au/DU/Au）＂sandwich structure＂ films are deposited by magnetron sputtering.Diffusions of Al/DU and Au/DU interface of these samples are investigated by high resolution scanning electronic microscope,X-ray diffraction,X-ray photoelectron spectrometer and scanning auger microprobe.The results show that deposited DU layer is of columnar grain.Significant diffusion takes place at Al/DU interface.Intermetallic compounds of Al2U and Al3U are formed at Al/DU interface by chemical reaction between Al and DU which induces chemical shift toward high binding energy of Al 2p and toward low binding energy of U 4f.Microdosages of O exist in Al over-layers as Al2O3,in Al/DU interface as Al2O3 and oxidation of uranium,and in DU layers as oxidation of uranium respectively.Just simple physical diffusion takes place at Au/DU interface.Binding energies of Au 4f and U 4f shift toward high-energy tail induced by cluster effect at the Au/DU interface.Microdosages of O exist at Au/DU interface and in DU layers as oxidation of uranium.Diffusion at the Al/DU interface is more obvious than at Au/DU surface.Under the condition of the same thickness valuses Al over-layer is more effective than Au over layer to protect uranium layer from oxidging.

关 键 词：AL DU界面 AU DU界面 磁控溅射 界面扩散 

分 类 号：TL632.1[核科学技术—核技术及应用]