浅结密栅线硅太阳电池工艺研究  

Study on Shallow Junction and Multi-grid Process for Silicon Solar Cells

作　　者：马继奎[1] 陈明敬 闫英丽 崔景光 张东升[1] 安海娇[1] 

机构地区：[1]英利绿色能源控股有限公司,河北保定071051 [2]风帆光伏能源有限公司,河北保定071051

出　　处：《半导体光电》2013年第2期241-243,246,共4页Semiconductor Optoelectronics

基　　金：太阳能光伏发电技术国家重点实验室建设项目(10963922D)

摘　　要：通过提高发射区方块电阻,配合密栅线丝网印刷工艺,制备了性能优良的多晶硅太阳电池。对比两种不同扩散工艺的方块电阻和ECV浓度,分析发射区方块电阻对太阳电池电性能参数的影响。结果表明:方阻为80Ω/□的发射区比70Ω/□的发射区的太阳电池串联电阻增加了0.03mΩ,导致填充因子下降0.05%,但是开路电压和短路电流密度分别提高了0.9mV和0.13mA/cm2,最终转换效率仍然提高了0.08%。The high quality multi-crystalline silicon solar cells were achieved by increasing the sheet resistance of the emitter and using the multi-grid screen printing process. Through comparing with sheet resistance and ECV concentration of two different diffusion processes, the effect of emitter sheet resistance on the electrical properties of solar cells were studied. The results shows that, compared with the polycrystalline silicon solar cells with 70Ω/□ emitter, the cells with 80Ω/□ emitter demonstrate an improvement of 0.9 mV in open-circuit voltage, 0.13 mA/cm2 in short current density, and thus 0.08% higher in energy conversion efficiency, in spite of a 0.05 % loss in fill factor resulted from a 0.03 m; increase in series resistance.

关 键 词：多晶硅电池 方块电阻 丝网印刷 电性能 

分 类 号：TM919.4[电气工程—电力电子与电力传动]