HgI_2多晶薄膜的气相同质外延生长  

Study on Iso-epitaxy Vapor Growth of HgI_2 Polycrystalline Film

作　　者：许岗[1] 谷智[2] 魏淑敏[1] 

机构地区：[1]西安工业大学材料与化工学院,西安710032 [2]西北工业大学凝固技术国家重点实验室,西安710072

出　　处：《半导体光电》2013年第2期247-250,254,共5页Semiconductor Optoelectronics

基　　金：西安工业大学凝固理论与功能材料科研创新团队基金项目;西北工业大学基础研究基金项目(JC20110244)

摘　　要：为提高HgI2多晶薄膜的气相定向生长效果,在ITO导电玻璃上从不同浓度的C3H6O-HgI2-H2O溶液中过饱和析出HgI2衬底层。通过XRD对比衬底层的定向效果,选择最佳的衬底并气相外延沉积HgI2多晶薄膜。利用SEM、XRD分析了薄膜的定向生长特性;以137 Cs为放射源,在室温下测试了探测器的探测效率。Abstract： In order to improve the orientated growth of Hgl2 films in vapor, iso-epitaxy layers of polycrystalline mercuric iodide were deposited on ITO conductive glass by acetone-Hgl2- H2O solvent with different concentrations. Polycrystalline Hgl2 films were then grown on better orientation iso-epitaxy layers by PVD. The grown films were investigated by SEM and XRD. The efficiency of the detectors was studied by using uncollimated 137 Cs as the radiative source with the principle energy of 662 keV at room temperature.

关 键 词：碘化汞 多晶薄膜 同质外延 定向生长 

分 类 号：O472.4[理学—半导体物理]