pH值对硅掺杂TiO_2薄膜光电化学性能的影响  

Influence of pH on the Photoelectrochemical Properties of Silicon-doped TiO_2 Thin Film

作　　者：孙钰珺[1] 崔晓莉[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《复旦学报（自然科学版）》2013年第1期9-14,共6页Journal of Fudan University：Natural Science

基　　金：上海市科学技术委员会纳米专项资助项目(1052nm01800)

摘　　要：以Ti-Si镶嵌靶采用直流反应磁控溅射法制备了Si掺杂TiO2薄膜(Si-TiO2).通过场发射扫描电子显微镜(FE-SEM)、X-射线光电子能谱(XPS)及紫外-可见光吸收光谱对样品进行了表征,研究了薄膜样品在不同pH值的电解液中的光电化学性能.XPS结果表明,Si-TiO2中存在Ti-O-Si键,表明Si原子以掺杂形式进入TiO2晶格;与纯TiO2相比,Si-TiO2的表面颗粒尺寸有所增大,光学吸收带边发生红移.在pH值为1～13的电解液中,Si-TiO2薄膜相比纯TiO2薄膜的光电化学响应提高.碱性电解液尤其是pH值大于12时能够进一步提高Si-TiO2薄膜的光电化学性能,而酸性电解液则比较难以使样品的光电化学性能得到提高.Silicon-doped TiO2 thin film （Si-TiO2） was prepared by direct current （IX2） reactive magnetron sputtering using a Ti-Si mosaic target. The samples were characterized by field-emission scanning electron microscope, X-ray photoelectron spectroscopy, UV-Vis diffuse reflectance spectroscopy and photoelectrochemistry. The XPS results showed that Ti--O--Si bond was formed in Si-TiO2 sample, which indicated the silicon atoms were doped into TiO2 lattice. Larger average particle sizes and red shift of optical absorption edge were observed for Si-TiO2 in comparison to pristine TiO2. The photoelectrochemical properties were measured in aqueous electrolyte solutions at different pH values under UV-Vis light irradiation. It has been found that enhanced photoelectrochemieal property was observed for the Si-TiO2 in aqueous electrolyte solutions at pH values ranging from 1 to 13 compared with the pristine TiO2 sample. Alkaline electrolyte was beneficial for the improvement of photoelectrochemical response, especially at pH value above 12. Meanwhile, acidic electrolyte was less beneficial for the improvement of photoelectrochemical property.

关 键 词：二氧化钛 硅掺杂 直流反应磁控溅射 PH值 光电化学性能 

分 类 号：O646[理学—物理化学]