一种高压SJ—nLDMOS的准饱和特性研究  

Research on Quasi-saturation Effect in High-voltage SJ-nLDMOS

作　　者：徐英雪[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《电源技术应用》2013年第5期48-52,共5页Power Supply Technologles and Applications

摘　　要：研究了高压sj—nLDMOS器件中的一种特殊的电流饱和现象一准饱和效应。利用仿真工具SILVACO，对三维nLDMOS器件进行仿真，并从准漏极电压仉’和漂移区耗尽层入手，研究了准饱和效应的物理机制。与常规双RESURF—nLDMOS器件相比，在不改变器件击穿电压的情况下，降低了器件的导通电阻，大幅度提高器件的开态准饱和电流。A specific current saturation phenomenon in high-voltage super junction （SJ） nLDMOS, i.e., the quasi-saturation effect, is investigated A three-dimensional nLDMOS is simated using SILVACO, and the physical mechanism of the quasi-saturation effects is investigated starting from the quasi-drain voltage U and the depletion region of the drift region. Compared with the conventional double RESURF-nLDMOS device, the on-resistance of the device is reduced and the on-state quasi-saturation current is greatly increased without changing the breakdown voltage of device

关 键 词：准饱和效应 超结 高压nLDMOS 

分 类 号：TN304[电子电信—物理电子学]