GaAs/Al_xGa_(1-x)As三量子阱中势垒厚度对激子结合能的影响及其压力效应  

Influence of Barrier Thickness on the Binding Energy of Excitons in a GaAs/Al_xGa_(1-x)As Three-quantum-Well and Its Pressure Effect

作　　者：王丽青[1] 班士良[1] 

机构地区：[1]内蒙古大学物理科学与技术学院,呼和浩特010021

出　　处：《内蒙古大学学报（自然科学版）》2013年第3期273-279,共7页Journal of Inner Mongolia University：Natural Science Edition

基　　金：国家自然科学基金资助项目(No.61274098)

摘　　要：选取三量子阱模型,采用变分法讨论GaAs/AlxGa1-xAs有限深量子阱中势垒厚度对激子行为的影响,主要计算激子结合能随阱宽和垒厚的变化关系以及Al组分的影响.结果表明,当阱宽较大时,结合能随势垒厚度的变化先增加后趋于稳定值;当阱宽较小时,结合能随垒厚则先减至极小值后再增加.上述结论与通常的有限深势阱之结果相差较大,此修正可为相关的理论和实验提供参考.结果还显示,有限厚势垒情形结合能随压力线性增加的趋势明显小于无限厚势垒情形.A variational method is adopted to investLgatethe influence of the barrier thickness onthe properties of excitons in GaAs/AlxGa1-x As finite depth quantum well using a three-- quantum- well model. A calculation about the variation relations of the excitons binding energy versus the well width and barrier thickness is given and the influence of A1 component is also discussed. The numer- ical results show that as the barrier thickness increasing the binding energy increases first and then trends to be stable for a wide width of wells;whereas the binding energy decreases primarily and then increases with the barrier thickness increasing for a less well width. There is a big difference between the results stated above and the results for the usual finite well depth. The correction may provide a reference for the related theories and experiments. The results also indicate that the trend of the binding energy increasing linearly with pressure for the finite barrier thickness case is obvi- ously less than that for the infinite barrier thickness case.

关 键 词：激子结合能 三量子阱 压力效应 

分 类 号：O471.3[理学—半导体物理]