高温氩/氢混合气氛退火对硅片表面质量的影响  

Effect of Argon/Hydrogen Mixed Ambient on Wafer's Surface Quality in High Temperature Annealing Process

作　　者：王磊[1] 周旗钢[1] 李宗峰[1] 冯泉林[1] 闫志瑞[1] 李青保[1] 

机构地区：[1]北京有色金属研究总院有研半导体材料股份有限公司,北京100088

出　　处：《稀有金属》2013年第3期401-404,共4页Chinese Journal of Rare Metals

基　　金：国家科技部科技重大专项(2008ZX41091)资助项目

摘　　要：研究了高温退火过程中氩/氢混合气氛对300 mm硅片表面质量(原生颗粒缺陷和微粗糙度)的影响。在氢气含量不同的氩/氢混合气氛中,对样品进行1100℃,1 h的高温退火处理,研究退火前后硅片表面原生颗粒缺陷和微粗糙度值的变化。实验结果表明,氩/氢混合气氛中氢气的含量对硅片表面原生颗粒缺陷的消除没有促进也没有抑制作用,增加氢气比例能促进硅片近表层处空洞型缺陷的消除;混合气氛中氢气的存在使得退火后硅片表面的微粗糙度值增加的更多,同时随着氢气比例的增加,表面微粗糙度增加的百分比总体呈递增趋势。最后就氢气对硅片近表面处空洞型缺陷的消除促进作用和氢气至表面微粗糙度变化机制做了分析。The effect of argon/hydrogen mixed ambient on wafer＇s surface quality in high temperature annealing process was investi- gated. After annealing at 1100 ℃ for 1 h, the concentration variation of crystal originated particles（COP） related to voids and surface microroughness was observed by laser particle counter. The results shown that, compared with the argon ambient, the argon/hydrogen mixed ambient essentially had no promoted action on reducing the COP of the wafer surface, but it made the void near the surface re- duced and the microroughness increased. And with the increase of the hydrogen content, the increase of surface microroughness was on an increasing trend. Finally, the mechanism for this result was explored.

关 键 词：高温退火 表面微粗糙度 空洞型缺陷 原生颗粒缺陷 

分 类 号：TN305.2[电子电信—物理电子学]