磁过滤阴极电弧技术沉积高sp^3键含量四面体非晶碳薄膜的工艺优化研究  

Growth Optimization of Tetrahedral Amorphous Carbon Films with High sp^3 Density

作　　者：韩亮[1] 张涛[2] 刘德连[1] 

机构地区：[1]西安电子科技大学技术物理学院,西安710071 [2]中国电子科技集团公司第五十八研究所,无锡214035

出　　处：《真空科学与技术学报》2013年第3期203-207,共5页Chinese Journal of Vacuum Science and Technology

基　　金：中央高校基本科研业务费专项资金资助(No.K5051205001)

摘　　要：通过对不同基片偏压下磁过滤器电流对四面体非晶碳(ta-C)薄膜sp3键含量影响的研究,探讨了磁过滤阴极电弧技术制备高sp3键ta-C薄膜优化工艺条件。在不同的基片偏压下,薄膜沉积率随着磁过滤器电流增大而增大。当基片偏压为200 V时,磁过滤器电流从5A增大至13 A,ID/IG从0.18增加到0.39;当基片偏压500V时,ID/IG从1.3增加到2.0;证明随着磁过滤器电流的增大,薄膜中的sp3键含量在减少,sp2键及sp2团簇在逐渐增加。研究表明除了基片偏压,ta-C薄膜sp3键含量与制备工艺中磁过滤电流也具有及其密切的关联.因此,基片偏压与磁过滤器电流是ta-C薄膜制备中需要优化的工艺条件。优化和选择合适的基片偏压与磁过滤器电流对ta-C薄膜的大规模工业化生产应用具有极其重要的意义。The tetrahedral amorphous carbon（ta-C）films,with high sp3 density,were grown by magnetically filtered cathodic arc deposition on Si substrates.The impacts of the growth conditions on the sp3 density were experimentally studied.The ta-C films were characterized with Raman spectroscopy.The results show that the substrate bias and filter current strongly affect the electronic structures of the ta-C films.For instance,the deposition rate increased with an increase of the filter current.What’s more,as the filter current increased from 5 to 13 A,the ID/IG ratio in Raman spectrum of the film,grown at a bias of 200 V,increased from 0.18 to 0.39;but ID/IG of the films,deposited at 500 V,varied from 1.3 to 2.0,indicating a decrease of sp3 density,accompanied by an increase of sp2 density and sp2 clusters.When it comes to ta-C film growth on industrial scale,we suggest that optimization of the substrate bias and the filter current be of much technological interest.

关 键 词：四面体非晶碳 拉曼光谱 sp3键 基片偏压 磁过滤器电流 

分 类 号：TB383[一般工业技术—材料科学与工程]