掺钼氧化锌薄膜的发光特性  

Photoluminescence of Mo-Doped ZnO Thin Films

作　　者：石市委[1,2,3] 徐汉淑[1,2,3] 李洪霞[1,2,3] 朱煜东[1,2,3] 孙兆奇[1,2,3] 

机构地区：[1]安徽大学物理与材料科学学院,合肥230039 [2]光电信息获取与控制教育部重点实验室,合肥230039 [3]安徽省信息材料与器件重点实验室,合肥230039

出　　处：《真空科学与技术学报》2013年第3期245-248,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(51272001;51072001;61290301);安徽大学青年科学研究基金项目(2009QN008A)

摘　　要：使用磁控溅射法在石英基底上制备钼掺杂氧化锌薄膜。扫描电镜结果表明薄膜由晶粒大小为40～80 nm范围内的颗粒组成,薄膜具有六方纤锌矿型结构且沿c轴择优取向生长。在可见光范围(400～760 nm)内所有薄膜的平均光透射率超过90%。退火薄膜的光致发光(PL)光谱表明,退火处理对发光峰的位置有很大影响,随着退火温度的增加,发光峰位置从380 nm红移至400 nm或从470 nm红移至525 nm。此外,钼掺杂对退火薄膜PL光谱的强度影响很大。我们认为,薄膜中缺陷浓度的变化是导致发光峰红移的主要原因,讨论了PL谱中不同的可见光的发光机制。The Mo-doped ZnO films were grown by magnetron sputtering on quartz substrate.The influence of the growth conditions,including the pressure,annealing temperature,and content of MoO3 of the target,on the microstructures and photoluminescence of the films was evaluated.The Mo-doped ZnO films were characterized with X-ray diffraction,scanning electron microscopy,and photoluminescence（PL）spectroscopy.The average transmittance in the visible range（400～760 nm）was found to be over 90%.The results show that the Mo-doping and annealing strongly affect the PL of the c-axis preferentially oriented,wurtzite-phased ZnO films with grain size ranging from 40 to 80 nm.For example,an increase of the annealing temperature resulted in a red-shift of PL peak from 380 to 400 nm,or a red-shift from 470 to 525 nm.Besides,Mo-doping strongly enhanced the PL intensity.We suggest that an increase of defect density may account for the red-shift.

关 键 词：钼掺杂 氧化锌 微结构 光致发光 退火 

分 类 号：O472.3[理学—半导体物理]