质子和中子在硅中位移损伤等效性计算  

Calculation of equivalence of proton and neutron displacement damage in silicon

作　　者：王园明[1] 郭晓强[1] 罗尹虹[1] 陈伟[1] 王燕萍[1] 郭红霞[1] 张凤祁[1] 张科营[1] 王忠明[1] 丁李利[1] 闫逸华[1] 赵雯[1] 肖尧[1] 

机构地区：[1]西北核技术研究所,西安710024

出　　处：《强激光与粒子束》2013年第7期1803-1806,共4页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(11175271)

摘　　要：基于蒙特卡罗软件Geant4,探讨质子与硅的库仑散射和核反应及中子与硅的核反应产生反冲原子沉积非电离能量的过程,建立质子和中子在硅中的非电离能量阻止本领计算方法。在此方法中,描述了原子间库仑散射的物理过程,模拟带电粒子与晶格原子之间的屏蔽库仑散射。计算得到不同能量质子和中子在硅中因库仑散射和核反应产生反冲原子的非电离能量沉积及阻止本领的等效性,计算结果与中子ASTM标准及文献计算得到的质子数据符合很好。Based on the Monte Carlo software Geant4, we investigate the Coulomb scattering of protons by silicon and nu- clear reactions induced by protons and neutrons in silicon, and the generation of recoil atoms depositing non-ionizing energy. The method for calculating non-ionizing energy stopping power of the protons and neutrons in silicon is established. This method de- scribes the Coulomb scattering among atoms, and the screened Coulomb scattering between charged particles and lattice atoms. The non-ionizing energy stopping power of different energy neutrons and protons in silicon due to nuclear reaction and direct Cou- lomb scattering and its equivalence are calculated. The calculation results agree with the neutron ASTM standard and the proton data calculated by the reference.

关 键 词：中子 质子 硅 反冲原子 非电离能量阻止本领 

分 类 号：TN99[电子电信—信号与信息处理]