An innovative way of etching MoS2： Characterization and mechanistic investigation  

作　　者：Yuan Huang Jing Wu Xiangfan Xu Yuda Ho Guangxin Ni Qiang Zou Gavin Kok Wai Koon Weijie Zhao A. H. Castro Neto Goki Eda Chengmin Shen Barbaros Ozyilmaz 

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 China [2]Department of Physics, 2 Science Drive 3, National University of Singapore, 117542 Singapore [3]Graphene Research Centre, 6 Science Drive 2, National University ofSingapore, 117542 Singapore [4]Department of Chemistry, National University of Singapore, 6 Science Drive 2, 117546 Singapore [5]Nanocore, 4 Engineering Drive 3, National University of Singapore, 117576 Singapore [6]NUS GraduateSchoolforlntegrativeSciences andEngineefing (NGS), Centre forLifeSciences (CeLS), 28MedicalDrive, 117456 Singapore

出　　处：《Nano Research》2013年第3期200-207,共8页纳米研究（英文版）

摘　　要：We report a systematic study of the etching of MoSs crystals by using XeF2 as a gaseous reactant. By controlling the etching process, monolayer MoS2 with uniform morphology can be obtained. The Raman and photoluminescence spectra of the resulting material were similar to those of exfoliated MoS2. Utilizing this strategy, different patterns such as a Hall bar structure and a hexagonal array can be realized. Furthermore, the etching mechanism was studied by introducing graphene as an etching mask. We believe our technique opens an easy and controllable way of etching MoS2, which can be used to fabricate complex nanostructures, such as nanoribbons, quantum dots, and transistor structures. This etching process using XeF2 can also be extended to other interesting two-dimensional crystals.

关 键 词：MOS2 ETCHING XEF2 graphene PHOTOLUMINESCENCE HEXAGONAL 

分 类 号：O484.41[理学—固体物理] TN41[理学—物理]