基于铜铝氧化物的透红外导电薄膜  

Infrared Transparent Conductive Films Based on CuAl_xO_y

作　　者：陶飞[1] 孙维国[1] 张亮[1] 王理文[1] 张磊[1] 朱旭波[1] 司俊杰[1] 

机构地区：[1]中国空空导弹研究院,红外探测器技术航空科技重点实验室,河南洛阳471009

出　　处：《红外技术》2013年第5期270-273,299,共5页Infrared Technology

基　　金：国家自然科学基金项目;编号:61171012

摘　　要：研究了一种新型透红外的导电薄膜铜铝氧化物(CuAlxOy),选用高纯度铜、铝靶材,利用磁控溅射台在蓝宝石衬底上生长CuAlxOy薄膜。研究了氧气流量、薄膜厚度、预溅射铜层时间(铜层厚度)等重要条件对薄膜性能的影响。实验发现,通过微调溅射参数、合理控制预溅射铜层过程可以获得低电阻率和高透过率的铜铝氧化物薄膜。得到最好的CuAlxOy薄膜(厚度为1765)在波长2.6μm处红外透过率达到了最大值62.5%,红外波段(波数8000～2000 cm-1)的平均透过率达到53%,方块电阻为358.9/sq,电阻率为6.33×10-3.cm。This paper presents a novel infrared transparent conductive film based on copper aluminum oxides （CuAlxOy）. CuAlxOy films are deposited on the sapphire by reactive magnetron co-sputtering using DC applied to the high-purity Cu target, RF applied to the high-purity Al target. Some influences of films properties are discussed. These influences have included the flow of oxygen gas, the thickness of films, the time of pre-deposition Cu layer etc. It has been found that, by fine-tuning the sputtering parameters and proper control of pre-deposition Cu layer, the films with both reasonably low resistivity and high transmittance can be obtained simultaneously. The best films with a thickness of 1765 A has the highest transmission of 62.5% at the wavelength of 2.6 μm, and the average transmission of 53% in the IR band（wave number from 8000 to 2000 cm^-1）. The sheet resistance of the film is as low as 358.9 Ω/sq, which corresponds to a resistivity of 6.33×10^-3Ω·cm.

关 键 词：铜铝氧化物 导电薄膜 红外透过率 薄膜电阻率 磁控溅射 

分 类 号：TN304[电子电信—物理电子学]