石墨烯薄膜的生长及结构表征研究  

Growth and Structural Characterization of Graphene Film

作　　者：蔡晓岚[1] 刘志涛[1] 王菡[1] 王晓敏[1] 王永祯[1] 

机构地区：[1]太原理工大学材料科学与工程学院,太原030024

出　　处：《太原理工大学学报》2013年第3期317-320,共4页Journal of Taiyuan University of Technology

基　　金：山西省自然科学基金(20051028);山西省科技攻关资助项目(20090321031);太原市科技资助项目(120164037)

摘　　要：在常压条件下,以铜箔为基底、CH4为碳源,通过化学气相沉积法(CVD)生长出了石墨烯薄膜。利用拉曼光谱、扫描电子显微镜、四探针电导率仪表征分析了产物。结果表明:生长温度为1 000℃,H2流量为60mL/min,CH4流量为2.5mL/min,Ar流量为80mL/min时,在基底表面生长出了连续分布的石墨烯薄膜,且大部分区域为单层,同时结晶程度高缺陷小;转移后的石墨烯薄膜面积大、透光性良好,兼具有良好的导电性,其薄层电阻为1 822Ω。Graphene films were grown on copper substrate by chemical vapor deposition（CVD）,with CH4as carbon source at ambient pressure.Raman Spectrometry,Scanning Electron Microscopy,and Four-probe Conductivity measurement were used to character the graphene.The results reveal that graphene film was continuously grown on the substrate surface at 1 000℃,hydrogen flow rate of 60 mL/min,methane flow rate of 2.5 mL/min and argon flow rate of 80 mL/min.Meanwhile,most area of the graphene film was monolayer with high degree of crystallinity and little defect.The transferred graphene film had large area,high transparency and good electrical conductivity with a sheet resistance of 1 822 Ω.

关 键 词：石墨烯 常压 化学气相沉积 结构表征 

分 类 号：TQ127.1[化学工程—无机化工]