GaN核辐射探测器的性能研究  

Study on Performance of GaN Radiation Detector

作　　者：苏丹[1] 张国光[1] 陆敏[2] 姚昌胜[2] 赵潇[1] 丰树强[1] 

机构地区：[1]中国原子能科学研究院核技术应用研究所,北京102413 [2]中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州215125

出　　处：《原子能科学技术》2013年第5期884-887,共4页Atomic Energy Science and Technology

摘　　要：GaN作为第3代半导体材料,具有禁带宽度大、电子饱和漂移速度大、抗辐射能力强等特点。制备了GaN半导体探测器,并应用该探测器对241 Amα粒子能谱进行测量,得到α粒子能谱的能量分辨率约30%。同时,以Si半导体探测器为标准,对GaN探测器进行了能量及探测效率的测量,得到探测器的探测效率最高可达80.1%。最后,应用Keithley 2635静电计对GaN探测器的I-V曲线等进行测试,发现在-15V偏压下,GaN探测器的本底电流密度小于70nA/cm2。Gallium nitride（GaN） as a radiation detector has many advantages,such as wide forbidden band,high resistant radiation and so on.It can be applied in high temperature and high density radiation field environment.The energy spectrum of 241Am α particle was measured by GaN semiconductor detector,and the energy resolution of which is about 30%.At the same time,the energy and detection efficiency calibration of GaN detector was carried out using Si semiconductor detector which was assumed to have 100% detection efficiency.The detection efficiency of GaN detector was up to 80.1%.Finally,current-voltage（I-V） curve was measured using Keithley 2635 electrometer.The background current density is less than 70 nA/cm2 at-15 V reverse bias.

关 键 词：GaN核辐射探测器 能谱 Α粒子 

分 类 号：TL81[核科学技术—核技术及应用]