GaOOH和Ga_2O_3的制备及光学性能研究  

Synthesis and Optical Properties of GaOOH and Ga_2O_3

作　　者：梁建[1,2] 王晓斌[1,2] 张艳[1,2] 董海亮[1,2] 刘海瑞[1,2] 许并社[1,2] 

机构地区：[1]太原理工大学新材料界面科学与工程教育部重点实验室,太原030024 [2]山西省新材料工程技术研究中心,太原030024

出　　处：《人工晶体学报》2013年第5期804-809,814,共7页Journal of Synthetic Crystals

基　　金：长江学者和创新团队资助项目(IRT0972);国家自然科学基金(51002102);山西省自然科学基金(2011011022-1;2012011046-7);山西省研究生优秀创新项目(20113033)

摘　　要：采用水热法制备了不同形貌和尺寸的GaOOH前驱体。通过XRD、SEM和TEM进行表征,并探讨分析了GaOOH的生长机理。结果表明,前驱液的pH值对GaOOH的形貌有明显的调控作用并对其结晶度有一定影响。然后将制备的GaOOH前驱体分别在温度为600℃和900℃的空气中煅烧转化成了α-Ga2O3和β-Ga2O3。煅烧后的产物具有良好的形貌继承性。荧光光谱测试(λex=250 nm)结果显示,pH值为5时制备的GaOOH和Ga2O3的发射峰位于415 nm和465 nm,而在pH值为3和8时的发射峰均位于370 nm和465 nm。GaOOH precursors with different morphologies and sizes were synthesized by hydrothermal method.The products were characterized by XRD,SEM and the probable growth mechanism of GaOOH was analyzed.The pH values played a dominated role in adjusting GaOOH morphologies and had an effect on their crystallizations.The GaOOH precursors were calcined in air and transformed into α-Ga2O3 and β-Ga2O3 under 600 ℃ and 900 ℃,respectively.The samples after calcinations showed coincident morphology hereditability.Photoluminescence measurements(λex=250 nm) were conducted for the GaOOH and Ga2O3 samples and the emission peaks located at 415 nm and 465 nm when pH=5,however,at 370 nm and 465 nm for pH=3 and 8.

关 键 词：GaOOH GA2O3 水热法 光致发光 

分 类 号：O77[理学—晶体学]