温度对绝缘层上应变SiGe沟道p-MOSFET电学特性的影响  

Effects of Temperature on Electrical Characteristics of Strained SiGe Channel-on-Insulator p-MOSFET

作　　者：于杰[1] 王茺[1] 杨洲[1] 胡伟达[2] 杨宇[1] 

机构地区：[1]云南大学光电信息材料研究所,昆明650091 [2]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《人工晶体学报》2013年第5期875-879,885,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(10990103;11274266);教育部科学技术研究重点(210207);云南省自然基金重点资助项目(2008CC012)

摘　　要：本文利用二维数值模拟方法,模拟分析了不同工作温度时绝缘层上应变SiGe沟道p-MOSFET的输出特性和亚阈值特性。结果表明:随着器件工作温度的不断提高,漏源饱和电流单调减小;亚阈值电流略有增大;亚阈值摆幅的改变量ΔS与温度基本上成线性关系;阈值电压不断地向正方向偏移。通过考虑自热效应的影响,不同Ge组分器件的漏源饱和电流均有不同程度的降低,且随着Ge组分的增加,漏源饱和电流的降低幅度增大。In this paper,the output characteristics and subthreshold characteristics of strained SiGe channel-on-insulator p-MOSFET with different working temperatures were investigated via two-dimensional numerical simulation.The results showed that the drain-source saturation current of the device decreases monotonically with the rise in working temperature,while the subthreshold current increases slightly.The temperature dependence of the variation of subthreshold swing(ΔS) is linear.Moreover,the threshold voltage shifts toward the positive direction continually.Taking account of the self-heating effect,the drain-source saturation currents of the device with different Ge mole fraction are decreased in different degree.Meanwhile,the reductions of drain-source currents are increased with the increase of Ge mole fraction.

关 键 词：温度 应变SiGe沟道 P-MOSFET 自热效应 

分 类 号：TN386.1[电子电信—物理电子学]