硅衬底键合砷化镓薄膜的力学仿真分析  

Mechanical simulation analysis on Si substrate bonding GaAs film

作　　者：薛慧[1,2] 石云波[1,2] 郭浩[1,2] 唐军[1,2] 刘俊[1,2] 丁宇凯[1,2] 

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室,山西太原030051 [2]中北大学电子测试技术重点实验室,山西太原030051

出　　处：《传感器与微系统》2013年第6期53-55,59,共4页Transducer and Microsystem Technologies

基　　金：国家自然科学基金资助项目(61171056)

摘　　要：采用介质键合技术制备的Si基GaAs材料衬底,缺陷密度小。对待键合的器件结构电学性能影响小。对采用目前常见的介质材料制备的Si基GaAs材料的力学性能进行了仿真分析,得到用于制备MEMS衬底的最佳介质键合层是SiO2,其衬底材料应力转换率高、量程大、位移小、制备工艺简单且为亲水性,制备的Si基GaAs衬底键合强度大,机械特性好。同时,对不同厚度的介质层材料对Si基GaAs材料的力学性能影响进行了研究分析,得到介质厚度越厚,其应力转换率越高,衬底材料的力敏效应就会越好。Si-based GaAs material substrate fabricated by medium bonding technology has low defect density,small effect on electrical property of the bonding device structure.Simulation analysis on mechanical characteristics of material is carried out.SiO2 is the best medium bonding layer for fabrication of MEMS substrate.The substrate material has high stress conversion rate,wide range,small displacement and simple fabrication process and is hydrophilic.The bond strength is strong and mechanical characteristics are good.Meanwhile,effect of different thickness of medium layer material on mechanical properties of Si-based GaAs material is researched.The more thicker the thickness of medium is,the higher stress conversion rate is,the better pressure sensitive effect is.

关 键 词：Si基异质外延GaAs材料 键合 应力转换率 力电耦合效应 

分 类 号：TB301[一般工业技术—材料科学与工程]