电子束泵浦ZnO/ZnMgO量子阱的最佳激发电压  

Decrease of Optimal Accelerating Voltage of ZnO-based Quantum Wells Pumped by Electron Beam

作　　者：尚开[1,2] 张振中[1] 李炳辉[1] 徐海洋[3] 张立功[1] 赵东旭[1] 刘雷[1] 王双鹏[1] 申德振[1] 

机构地区：[1]发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春130033 [2]中国科学院大学,北京100049 [3]东北师范大学,吉林长春130024

出　　处：《发光学报》2013年第6期692-697,共6页Chinese Journal of Luminescence

基　　金：国家自然科学基金(21100146);国家"973计划"(2011CB302006;2011CB302002)资助项目

摘　　要：对不同加速电压电子束泵浦下的ZnO/Zn0.85Mg0.15O量子阱的荧光光谱进行了研究。样品利用分子束外延技术在蓝宝石衬底上生长。激子隧穿使非对称双量子阱的激发效率相对于对称阱有了明显提高。非对称阱的结构设计使最佳激发电压从对称阱的7 kV降低到了更适合器件小型化的5 kV。Cathodoluminescence behavior multi-quantum wells was reported in this plasma-assisted molecular beam epitaxy. vs. accelerating voltage of electron beam in ZnO/ZnMgO paper. The samples were grown on sapphire substrate by By exciton tunneling, the excitation efficiency was im- proved significantly. In a sample with asymmetric double-quantum-wells, a marked reduction of the optimal acceleration voltage from 7 kV to 5 kV was obtained compared to the symmetrical multi- quantum well sample.

关 键 词：ZNO 量子阱 电子束泵浦 激子隧穿 

分 类 号：O484.4[理学—固体物理]