低温插入层对绿光LED的发光影响(英文)  

Luminescence Mechanism in Green InGaN/GaN LED with An Insertion Layer Between The Multiple Quantum Wells and n-GaN Layer

作　　者：宋世巍[1] 柳阳[1] 梁红伟[1,2] 夏小川[1] 张克雄[1] 杨德超[3] 杜国同[1,3] 

机构地区：[1]大连理工大学物理与光电工程学院,辽宁大连116024 [2]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050 [3]吉林大学电子科学与工程学院,吉林长春130012

出　　处：《发光学报》2013年第6期744-747,共4页Chinese Journal of Luminescence

基　　金：国家自然科学基金(60976010,61076045,11004020);国家863项目(2011AA03A102);中央高校项目(DUT12LK22,DUT11LK43,DUT11RC(3)45);高等学校博士学科点专项科研基金(20110041120045)资助项目

摘　　要：利用MOCVD技术在蓝宝石衬底上外延生长了具有低温插入层结构的绿光LED,研究了具有插入层结构的LED的发光特性。插入层的引入增加了In在量子阱中的并入,并且引起了波长红移。经过分析,认为是In的相分离和极化场带来的红移,且恶化了器件的性能。The green light emitting diode （LED） with an insertion layer between the multiple quantum wells and n- GaN layer was grown on c-plane sapphire substrate by metal organic chemical vapor deposition. The structural and op- tical properties of the LEDs with and without insertion layer were investigated. It is found that the insertion layer can promote the combination of In concentration, and induce an overall red-shift of wavelength. We speculate that the In phase separation and piezoelectric field would be responsible for the wavelength red-shift, the performance of LED de- teriorated either.

关 键 词：LED 相分离 插入层 

分 类 号：TN304.2[电子电信—物理电子学]