2～4GHz GaN MMIC功率放大器  

A 2-4 GHz GaN MMIC Power Amplifier

作　　者：刘文杰[1] 高学邦[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2013年第6期429-432,437,共5页Semiconductor Technology

摘　　要：相对GaAs材料而言,GaN具有更高的击穿电压和更高的功率密度,使得GaN更适合用于宽带功率放大器的设计和实现。采用比GaAs赝配高电子迁移率晶体管更小栅宽的器件,设计和实现了一种2～4 GHz GaN微波单片集成功率放大器,达到了与GaAs大栅宽器件同样的输出功率。通过研究GaN功率器件的材料生长、器件设计、模型提取、电路匹配以及热分析等技术,并对电路的设计和工艺进行优化。在器件输入端设计了有耗匹配网络以获得宽带,在输出端设计了电抗匹配网络以降低功率损耗,提高效率。把芯片装配到测试夹具进行了10%脉冲条件下的功率测试,测试结果表明,28 V供电、工作电流为1.2 A时,微波单片集成功率放大器在频带内的功率增益大于20 dB,输出功率约为10 W,功率附加效率达到30%。电路芯片尺寸为3.99 mm×2.1 mm。In comparison with GaAs,GaN material has higher breakdown voltage and higher power density,and GaN material is suitable for the design and implementation of the broadband power amplifier.A 2-4 GHz GaN MMIC power amplifier was designed and fabricated with smaller gate width than GaAs pseudomorphic high electron mobility transistor（PHEMT）.By analyzing the GaN high electron mobility transistor（HEMT）materials growth,device design,model extraction,circuit matching and heat analyzing,the design and fabrication of GaAs microwave monolithic integrated circuit（MMIC）were optimized.2-stage lossy matching network was used in front of the transistors to achieve most broadband.Reactance output matching network was used to achieve low power loss and high efficiency.Then the power of the amplifier was tested after mounting the chip on the test fixture with 10% pulse bias condition.The results show that when the DC supply and operating current are 28 V and 1.2 A,respectively,the power gain is above 20 dB and output power is about 10 W from 2 GHz to 4 GHz with a power added efficiency of 30%.The chip size is 3.99 mm×2.1 mm.

关 键 词：氮化镓 微波单片集成电路(MMIC) 高电子迁移率晶体管(HEMT) 宽带 功率放大器 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN722.75