高性能AlN薄膜体声波谐振器的研究  

Study on High Performance AlN Film Bulk Acoustic Resonator

作　　者：李丽[1] 郑升灵[1] 王胜福[1] 李丰[1] 李宏军[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2013年第6期448-452,共5页Semiconductor Technology

摘　　要：报道了一种空气隙型S波段薄膜体声波谐振器,该谐振器采用一维Mason模型进行仿真,电极材料选用Mo,压电薄膜材料选用AlN,通过对AlN薄膜制备条件的优化,得到了半高宽为3.32°的AlN压电薄膜,并用于研制薄膜体声波谐振器。测试结果表明,其串联谐振频率和并联谐振频率分别为2 185 MHz和2 217 MHz,有效机电耦合系数(kt2)为3.56%,在串联谐振频率和并联谐振频率处的品质因数(Q)值分别为1 571.89和586.62,kt2Q达到了55.96。根据实测结果提取了MBVD模型的参数,并将实测结果与MBVD拟合结果进行了对比,两者吻合得很好。A kind of air gap film bulk acoustic resonator（FBAR） was reported for S band application.The FBAR was simulated by one dimensional Mason model.The electrode material was Mo and piezoelectric film was AlN.AlN film has the full width at half maximum（FWHM） of 3.32° using the optimizing preparation condition.Then the FBAR was developed using above film.The measured data shows the series and parallel resonant frequency of 2 185 MHz and 2 217 MHz respectively,an effective electromechanical coupling coefficient（kt2） of 3.56%,quality factor（Q） of 1 571.89 and 586.62 respectively,kt2Q of 55.96.The modified Butterworth-Van Dyke（MBVD）model was extracted based on the measured results.The measured results were compared with simulated results of MBVD,and exhibited good agreement.

关 键 词：一维Mason模型 AlN压电薄膜 有效机电耦合系数 Q值 MBVD模型 

分 类 号：TN713[电子电信—电路与系统] TN751.2