GaAs FET脉冲功率放大器输出脉冲包络分析研究  

Output Pulse Envelope Analysis Based on the GaAs FET Pulse Power Amplifier

作　　者：顾占彪[1] 王淼[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2013年第6期474-478,共5页Semiconductor Technology

摘　　要：基于GaAs场效应晶体管(FET)微波脉冲固态功率放大器的输出脉冲包络,对输出脉冲波形的顶部降落与顶部过冲开展研究。从脉冲调制电路、GaAs FET的饱和深度以及沟道温度三个方面对脉冲顶降进行了讨论,指出了可以通过选用合适的储能电容、使GaAs FET工作在饱和状态、降低沟道温度来改善脉冲顶降。另外,从脉冲调制方式和寄生电感影响两方面分析了脉冲顶部过冲,给出了改善脉冲顶部过冲的措施,如减小电路中的寄生电感和选取合适的静态工作点。经实践验证,并通过脉冲顶降和顶部过冲在改善前后的数据对比,证明了上述措施是有效的。Based on the GaAs field effect transistor（FET） in the microwave pulse solid state power amplifier,the pulse waveform drop and overshooting were studied.By analyzing the causes of the pulse droop theoretically from pulse modulation circuit,the saturation depth of the GaAs FET and the channel temperature,it is pointed that the pulse droop could be improved by three methods,such as choosing the suitable capacitor value,making GaAs FET operate in saturation and reducing the channel temperature.By analyzing the pulse overshoot from the pulse modulation and the parasitic inductance,some improved measures were given,such as reducing the parasitic inductance circuit and selecting the appropriate quiescent operating point.These measures have been proved effectively by actual measurement from comparison of the data before and after the improvement for the pulse drop and pulse overshooting.

关 键 词：砷化镓 场效应晶体管(FET) 微波脉冲固态功率放大器 脉冲波形顶部降落 脉冲波形顶部过冲 

分 类 号：TN386[电子电信—物理电子学]