Reactive ion etching of poly(vinylidene fluoride-trifluoroethylene) copolymer for flexible piezoelectric devices  

作　　者：JIANG YongGang SHIONO Syohei HAMADA Hiroyuki FUJITA Takayuki ZHANG DeYuan MAENAKA Kazusuke 

机构地区：[1]School of Mechanical Engineering and Automation,Beihang University [2]Graduate School of Engineering,University of Hyogo [3]Maenaka Human-Sensing Fusion Project,ERATO,Japan Science and Technology Agency

出　　处：《Chinese Science Bulletin》2013年第18期2091-2094,共4页

摘　　要：A microfabrication process for poly(vinylidene fluoride-trifluoroethylene)(P(VDF-TrFE)) based flexible piezoelectric devices is proposed using heat controlled spin coating and reactive ion etching(RIE) techniques.Dry etching of P(VDF-TrFE) in CF 4 +O2 plasma is found to be more effective than that using SF 6 +O2 or Ar+O2 feed gas with the same radiofrequency power and pressure conditions.A maximum etching rate of 400 nm/min is obtained using the CF 4 +O2 plasma with an oxygen concentration of 60% at an antenna power of 200 W and a platen power of 20 W.The oxygen atoms and fluorine atoms are found to be responsible for the chemical etching process.Microstructuring of P(VDF-TrFE) with a feature size of 10 m is achieved and the patterned films show a high remanent polarization of 63.6mC/m 2.A microfabrication process for poly（vinylidene fluoride-trifluoroethylene） （P（VDF-TrFE）） based flexible piezoelectric devices is proposed using heat controlled spin coating and reactive ion etching （RIE） techniques. Dry etching of P（VDF-TrFE） in CF4＋O2 plasma is found to be more effective than that using SF6＋O2 or Ar＋O2 feed gas with the same radiofrequency power and pressure conditions. A maximum etching rate of 400 nm/min is obtained using the CF4＋O2 plasma with an oxygen concentration of 60% at an antenna power of 200 W and a platen power of 20 W. The oxygen atoms and fluorine atoms are found to be responsible for the chemical etching process. Microstructuring of P（VDF-TrFE） with a feature size of 10μm is achieved and the patterned films show a high remanent polarization of 63.6 mC/m2.

关 键 词：反应离子蚀刻 压电器件 三氟乙烯 P(VDF-TrFE) 偏氟乙烯 反应性 共聚物 SF6气体 

分 类 号：O631.3[理学—高分子化学]