等离子增强原子层沉积低温生长AlN薄膜  

Low-temperature growth of AlN thin films by plasma-enhanced atomic layer deposition

作　　者：冯嘉恒[1,2] 唐立丹[1] 刘邦武[2] 夏洋[2] 王冰[1] 

机构地区：[1]辽宁工业大学,锦州121001 [2]中国科学院微电子器件与集成技术重点实验室,北京100029

出　　处：《物理学报》2013年第11期436-441,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:61106060);中国科学院知识创新工程重大项目(批准号:Y2YF028001);国家高技术研究发展计划(批准号:2012AA052401);国家教育部重点项目(批准号:212031);辽宁省教育厅一般项目(批准号:L2011098)资助的课题~~

摘　　要：采用等离子增强原子层沉积技术在单晶硅基体上成功制备了AlN晶态薄膜,利用椭圆偏振仪、原子力显微镜、小角掠射X射线衍射仪、高分辨透射电子显微镜、X射线光电子能谱仪对样品的生长速率、表面形貌、晶体结构、薄膜成分进行了表征和分析,结果表明,采用等离子增强原子层沉积制备AlN晶态薄膜的最低温度为200C,薄膜表面平整光滑,具有六方纤锌矿结构与(100)择优取向,Al2p与N1S的特征峰分别为74.1eV与397.0eV,薄膜中Al元素与N元素以Al-N键相结合,且成分均匀性良好.The crystalline AIN thin film was fabricated on Si（100） substrates by plasma-enhanced atomic layer deposition. Its growth rate was illustrated by spectroscopic ellipsometer. And the surface morphology, crystal structure and composition were characterized by atomic force microscopy, X-ray diffraction, high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. Results show that the lowest temperature for deposition of the crystalline A1N thin film is 200 ℃, and the film coverage on the substrate surface is continuous and homogeneous. The film prepared with a homogeneous concentration distribution is polycrystalline with a hexagonal wurtzite structure. High resolution A12p and Nls spectra confirm the presence of/kiN with peaks located at 74.1 eV and 397.0 eV, respectively.

关 键 词：氮化铝 等离子增强原子层沉积 低温生长 晶态薄膜 

分 类 号：O484.1[理学—固体物理]