High-voltage super-junction lateral double-diffused metal-oxide semiconductor with a partial lightly doped pillar  

作　　者：伍伟 张波 方健 罗小蓉 李肇基 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China

出　　处：《Chinese Physics B》2013年第6期633-636,共4页中国物理B（英文版）

基　　金：supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2010ZX02201);the National Natural Science Foundation of China (Grant No. 61176069);the National Defense Pre-Research of China (Grant No. 51308020304)

摘　　要：A novel super-junction lateral double-diffused metal-oxide semiconductor （SJ-LDMOS） with a partial lightly doped P pillar （PD） is proposed. Firstly, the reduction in the partial P pillar charges ensures the charge balance and suppresses the substrate-assisted depletion effect. Secondly, the new electric field peak produced by the P/P junction modulates the surface electric field distribution. Both of these result in a high breakdown voltage （BV）. In addition, due to the same conduction paths, the specific on-resistance （Ron,sp） of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS. Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20 V/μm at a 15 μm drift length, resulting in a BV of 300 V.A novel super-junction lateral double-diffused metal-oxide semiconductor （SJ-LDMOS） with a partial lightly doped P pillar （PD） is proposed. Firstly, the reduction in the partial P pillar charges ensures the charge balance and suppresses the substrate-assisted depletion effect. Secondly, the new electric field peak produced by the P/P junction modulates the surface electric field distribution. Both of these result in a high breakdown voltage （BV）. In addition, due to the same conduction paths, the specific on-resistance （Ron,sp） of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS. Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20 V/μm at a 15 μm drift length, resulting in a BV of 300 V.

关 键 词：super-junction lateral double-diffused metal-oxide semiconductor partial lightly doped pillar electric field modulation breakdown voltage 

分 类 号：O471[理学—半导体物理]