热释电探测器PZT晶片制备工艺研究  

Study on Fabrication of Pyroelectric Detector PZT Wafer

作　　者：黄江平[1] 王羽[1] 袁俊[1] 王学森[1] 郭雨航[1] 余瑞云[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2013年第6期368-372,共5页Infrared Technology

摘　　要：介绍了热释电探测器PZT晶片制备工艺及选择锆钛酸铅(PZT)陶瓷材料制作敏感元的理论依据,阐述了晶片磨抛理论,对磨抛质量影响因素进行了细致分析。对比了几种抛光液对晶片表面的抛光效果,并进行了扫描电镜和表面粗糙度分析,得到了抛光后晶片表面的扫描电子显微镜(SEM)照片和晶片表面形态,确定了最佳抛光材料。通过理论和实践的结合,研制出了完全能满足器件工艺要求的热释电探测器晶片。This paper introduces the study of pyroelectric detector PZT wafer and the theory basis of choice of lead zirconate titanate （PZT） as sensitive element material. It also describes polishing and grinding theory. Factors affecting the polishing quality are analyzed in detail. The crystal surfaces polished by several different polishing liquid are analyzed by SEM, and SEM photos, surface roughness analysis and crystal surface morphology were gained. The best polishing material was determined. Through the combination of theory and practice, the pyroelectric detector wafer which could meet the technological requirements was got.

关 键 词：热释电探测器 锆钛酸铅(PZT)材料 PZT晶片 研磨抛光 

分 类 号：TN215[电子电信—物理电子学]