蓝光发光二极管的响应特性  

Response Characteristic of Blue Light-Emitting Diodes

作　　者：苏晨[1] 陈贵楚[1] 郑树文[1] 贺龙飞[1] 皮辉[1] 许毅钦[1,2] 童金辉[1] 范广涵[1] 

机构地区：[1]华南师范大学光电子材料与技术研究所,广东广州510631 [2]广东省工业技术研究院,广东广州510651

出　　处：《光学学报》2013年第6期297-301,共5页Acta Optica Sinica

基　　金：国家自然科学基金(61176043);广东省战略性新兴产业专项资金(2010A081002005;2011A081301003;2012A080304016);华南师范大学青年教师科研培育基金项目(2012KJ018)资助课题

摘　　要：利用方波脉冲调制和正弦波调制方法对自生长台阶形的蓝光发光二极管(LED)进行脉冲响应特性及调制带宽的测量分析;并利用APSYS软件计算了此种台阶形蓝光LED的能带图,计算表明,台阶形导带带阶提高了43meV,价带带阶下降了36meV。这一结果说明:采用台阶形电子阻挡层(EBL)的结构设计,有利于提高LED的发光功率和响应特性,这一性能的提高主要是由于更高的有源区载流子注入密度,进而提升有源区的电子-空穴辐射复合率。The impulse response characteristics and modulation bandwidth of blue light-emitting diode with a special-designed AlGaN staircase electron blocking layer are investiggated by using square wave pulse and sine wave modulation methods. And the energy band diagrams of the blue light-emitting diode （LED） with this special-designed staircase electron blocking layer have been numerically investigated using the APSYS simulation software. The simulation shows that ΔEc increases 43 meV and ΔEv decreases 36 meV. The results show that blue light-emitting diode with a special-designed AlGaN staircase electron blocking layer has better light output power and response performance. The superior performance can be attributed to higher carrier injection density of the active region, which improves the electron/hole radiative recombination rate.

关 键 词：光电子学 发光二极管 响应特性 调制带宽 有源区 

分 类 号：O47[理学—半导体物理]