硼离子注入对硅基Si_3N_4薄膜驻极体性质的影响及力学性能的改善  

Influence of Boron Ion Implantation on the Electret Properties and Mechanic Properties of Si3N4 Film Based on Silicon Substrate

作　　者：张晓青[1] 夏钟福[1] 潘永刚 张冶文[1] 李宝清[2] 林梓辛 

机构地区：[1]同济大学波耳固体物理研究所,上海200092 [2]中国科学院上海冶金研究所,上海200050

出　　处：《应用科学学报》2000年第3期255-258,共4页Journal of Applied Sciences

基　　金：国家自然科学基金!(59682003);中科院离子束开放研究实验室课题资助项目!(硼离子注入对Si3N4薄膜驻极体性能的改善)

摘　　要：利用硼离子Ｂ＋注入方法来改善Ｓｉ３Ｎ４薄膜的力学性质，并就Ｂ＋注入对Ｓｉ３Ｎ４薄膜驻极体性质的影响进行了较为系统的研究．实验结果表明，Ｂ＋注入能够有效地降低薄膜的内应力，而对薄膜的驻极体性质有不利的影响；用化学表面修正能够在一定程度上提高材料的抗恶劣环境能力。Amorphous silicon nitride (Si3N4) film has outstanding electret properties and it is compatible with the micromachining technology, so it can be used in miniature microphone. But big tensile stress of Si3N4 film limits its application. In this paper, the improvement of mechanical property of Si3N4 film by boron ion implantation and its influence on the electret properties of the film is discussed. The results show that the boron ion plantation reduces the tensile stress of film effectively,but it also decreases the electret properties of the film. The capability of Si3N4 electret film against environmental conditions can be increased by chemistrical surface modification. Therefore, Si3N4 film may be used as a vibrating film. After the stability of charge storage is improved,it may be used as electret material for miniature microphones.

关 键 词：氮化硅薄膜 驻极体 硼离子注入 内应力 

分 类 号：O484.2[理学—固体物理]