硅晶片抛光用高纯度大粒径硅溶胶的研究  

Study on the Silica Sol with High Purity and Large Particle Size that Suitable for Silicon Wafer Polishing

作　　者：郑典模[1] 潘鹤政[1] 屈海宁[1] 陈骏驰[1] 彭静红[1] 

机构地区：[1]南昌大学环境与化学工程学院,南昌330031

出　　处：《硅酸盐通报》2013年第6期999-1004,共6页Bulletin of the Chinese Ceramic Society

基　　金：南昌大学研究生创新基金(cx2012013)

摘　　要：本文采用硅粉水解-胶粒整理法制备硅晶片抛光所用硅溶胶,考察了单质硅粉的加入量、反应时间、反应温度、硅溶胶底液浓度、催化剂种类及用量对硅溶胶胶粒平均粒径增长的影响,得到最佳工艺条件:单质硅粉的最佳加入量为25 g、反应时间7 h、反应温度80℃、硅溶胶底液的质量浓度为8%、选稀氨水为催化剂、用量为12 mL,在此条件下可制备得到平均粒径为20 nm的硅溶胶产品。经过多次粒子生长可以制备得到适用于硅晶片抛光产业的高纯度大粒径硅溶胶。Taking the silicon powder hydrolysis-colloidal particle arrangement for preparation the silica sol of silicon wafer polishing,Several effects of reaction factors were investigated and optimum conditions were confirmed as follows： the best addition amount of simple substance silicon powder was 25 g,the best reaction time was 7 h,the best reaction temperature was 80 ℃,the mass concentration of the silica sol bottom fluid was 8%,choose dilute aqueous ammonia as catalyst and the dosage was 12 mL.Under the optimum conditions,can get the silica sol products with the average grain size of 20 nm.After many particle growth can get the high purity and large particle size silicon sol that suitable for silicon wafer polishing industry.

关 键 词：硅晶片抛光 高纯度 大粒径 硅溶胶 

分 类 号：TQ127[化学工程—无机化工]