工作气压对室温磁控溅射CIGS膜的影响  

Growth and Characterization of Cu(In,Ga)Se_2 Films byRF Magnetron Sputtering at Room Temperature

作　　者：闫勇[1] 李莎莎[1] 欧玉峰[1] 晏传鹏[1] 刘连[1] 张勇 赵勇[1,2] 余洲[1] 

机构地区：[1]西南交通大学超导与新能源研究开发中心磁浮技术与磁浮列车教育部重点实验室,成都610031 [2]新南威尔士大学材料科学与工程学院

出　　处：《真空科学与技术学报》2013年第6期610-614,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家磁约束核聚变能研究专项资助项目(2011GB112001);国际合作项目(2013DFA51050);国家自然科学基金资助项目(51271155);中央高校基本科研业务费资助项目(SWJTU11ZT16;SWJTU11ZT31;2682013CX004);四川省科技计划资助项目(2011JY0031;2011JY0130)

摘　　要：研究了工作气压对磁控溅射法制备CIGS薄膜的影响,采用X射线衍射,扫描电镜,X射线萤光光谱和X射线能量色散谱分析了膜层的组织和成分。研究发现,工作气压升高,薄膜沉积速率降低。当工作气压低于0.2 Pa时,薄膜致密均一;高于0.2 Pa表面出现Cu2-xSe相,并随气压升高在膜表面的覆盖面积增大。对气压影响薄膜表面形貌的机理采用成膜动力学理论进行了讨论。The Cu（In,Ga）Se2（CIGS） thin films were deposited by RF magnetron sputtering of a single quaternary target at room temperature on glass substrates, without additional selenization. The impacts of deposition conditions, in- cluding the argon pressure, sputtering power, and substrate temperature, on the quality of the CIGS films were evaluated. The microstructures of the as-deposited CIGS films were characterized with X-ray diffraction, scanning electron mi- croscopy, X-ray fluorescence spectroscopy, and energy dispersive spectroscopy. The results show that the pressure strongly affects the growth and properties of the films. For example, the deposition rate decreased with an increase of the pressure. At 0.2 Pa,the compact and uniform CIGS films were grown;at a pressure higher than 0.2 Pa, non-uniform,rough Cu2-x Se-phased grains formed, gradually spreading over the film surfaces with an increased pressure. Possible mechanisms re- spensible for the formation of Cu2-xSe phase were tentatively discussed on the basis of dynamics theory of film growth.

关 键 词：磁控溅射CIGS薄膜 工作气压 表面形貌 

分 类 号：O484[理学—固体物理]