一种光电流谱测试方法表征掺杂Al的ZnO多孔膜光电性能  

Characterization of Photoelectrical Performance of Al-doped ZnO Porous Film Using Photocurrent Spectrum Measurement

作　　者：李华曜[1] 谢长生[1] 杨其成[1] 朱强[1] 

机构地区：[1]华中科技大学材料成型与模具技术国家重点实验室

出　　处：《电子技术（上海）》2013年第6期80-82,79,共4页Electronic Technology

摘　　要：文章设计并搭建了一个金属氧化物半导体材料光电流谱测试平台。采用溶胶凝胶的方法在FTO上制作了掺杂Al的ZnO多孔膜材料并测试了其光电流谱。通过测试结果可以看到,相对于纯ZnO,掺杂Al的ZnO多孔膜在入射光波长为480nm时有明显响应,同时响应的绝对值也较高。这是由于掺杂Al导致多孔膜中Zn空位增加而引起的。这个现象表明掺杂的方式会引入特定的缺陷,使得材料在本征光电导区间外也有一定的响应,可以扩展了材料的波长响应区间。同时,我们的研究也表明,光电流谱的测试方式可以原位、直接、快速和准确地表征材料中缺陷对光电性能的影响。In this paper, a metal oxide semiconductor photocurrent spectrum test platform is designed and set up. The Al-doped ZnO porous film is prepared by sol-gel method on the FTO substrate, and its photocurrent spectrum is tested. From the result we can see that the Al-doped ZnO porous film shows an obvious response at the incident wavelength of 480nm, which has a big discrepancy to the as-grown ZnO, and its response amplitude is higher. This is attributed to the Zn vacancy increase in the porous film which introduced by the A1 doping. The result shows that the doping method may introduce specific defects to the material and extend the material＇s response wavelength. At the meantime, the photocurrent spectrum test can characterize the effect of the defects in the material on the photoelectrical performance directly, rapidly, accurately and in-situ.

关 键 词：光电流谱 掺杂 金属氧化物半导体 多孔膜 

分 类 号：TN248.4[电子电信—物理电子学]