多晶硅片反应离子刻蚀制绒后扩散工艺的匹配性  

Diffusion Processing and Its Matching Property of Multicrystalline Silicon Solar Cells Through Reactive Ion Etching Texturing

作　　者：豆维江 秦应雄[1,2] 巨小宝 李锴 徐挺 

机构地区：[1]西安黄河光伏科技股份有限公司,西安710043 [2]华中科技大学光学与电子信息学院,武汉430074

出　　处：《光子学报》2013年第6期649-653,共5页Acta Photonica Sinica

基　　金：国家自然科学基金(No.60808005);中央高校科研业务(No.HUST2013TS048);武汉市晨光计划(No.2013070104010006)资助

摘　　要：研究了多晶硅片在反应离子刻蚀制绒后与扩散工艺的匹配性.在相同的扩散工艺下,反应离子刻蚀制绒后硅片的方块电阻值比酸制绒工艺硅片的方块电阻值高3～11Ω/□,而且其方块电阻不均匀度值约为普通酸制绒工艺硅片的方块电阻不均匀度值的80%.测试了反应离子刻蚀制绒后多晶硅太阳能电池的外量子效率,其外量子效率在340～1 000nm波段范围与酸制绒多晶硅太阳能电池相比提高了约10%.对反应离子刻蚀制绒电池的电性能进行了分析,提出了与反应离子刻蚀制绒工艺匹配的高方阻扩散工艺.通过优化调整扩散工艺气体中的小氮和干氧流量,获得了在80Ω/□方块电阻下,反应离子刻蚀制绒多晶硅电池的光电转换效率提升至17.51%,相对于酸制绒多晶硅电池的光电转换效率提高了0.5%.The matching property of multicrystalline silicon wafers through its reactive ion etching （RIE） texturing with diffusing process was studied. Under the same diffusion processing, the value of sheet resistance of multicrystalline silicon wafers through RIE texturing is 3 to 11 Ω/□ which is higher than that through acid texturing. Additionally, the uneveness of the sheet resistance through RIE texturing is close to 80~ of that through acid texturing. For the band of 340-1 000 nm, the external quantum effeciency of the solar cells through RIE texturing is about 10 % higher than that of multicrystalline silicon solar cells through acid texturing. The electrical performace of muhicrystalline silicon solar cells through RIE texturing was analyzed, and the matched diffusing process with high sheet resistance was put forward. By optimizing adjustment diffusing process, under the condition of the sheet resistance of 80 Ω/□, the efficiency of multicrystalline silicon solar cells through RIE texturing has been increased to 17.51%, and it was 0.5% higher than that of multicrystalline silicon solar cells through acid texturing cells.

关 键 词：多晶硅片 反应离子刻蚀制绒 扩散 方块电阻 转换效率 

分 类 号：TM914[电气工程—电力电子与电力传动]