IGBT阻断能力的优化设计  

Optimum Design of Blocking Capability for IGBT

作　　者：冯松[1,2] 高勇[1,2] 

机构地区：[1]西安理工大学自动化与信息工程学院,陕西西安710048 [2]西安工程大学理学院,陕西西安710048

出　　处：《电力电子技术》2013年第7期99-100,共2页Power Electronics

基　　金：国家自然科学基金(61204080);陕西省教育厅科研计划项目(2013JK1111);西安工程大学博士科研启动基金项目资助(BS1128)~~

摘　　要：阻断能力是绝缘栅双极型晶体管(IGBT)的一个重要参数指标,阻断能力的好坏直接影响器件的整体特性。以平面穿通型IGBT为例,对IGBT的场限环终端结构进行了理论分析,通过器件模拟软件对IGBT的阻断特性进行了模拟,并优化了IGBT场限环的宽度、间距及数目,提高了IGBT的阻断能力,为IGBT的设计提供了参考。最终优化的结果,在场限环宽度分别为24μm,21μm,18μm,15μm,场限环间距为3μm,4μm,5μm,6μm,场限环数目为4个时,得到的阻断电压达到1 240V。Blocking ability is an important parameter of insulated gate bipolar transistor（IGBT）, which directly affects the overall characteristics of IGBT.The structure with field limiting rings is analyzed for planar punch through IGBT, the blocking capability of IGBT is simulated with the device simulation software, the width, spacing and number of IGBT field limiting rings are respectively optimized, the blocking capability of IGBT is improved, that provides a reference for the design of IGBT.The final optimization results is that,when the width of IGBT field limiting rings are 24 μm, 21 μm, 18 μm, 15 μm,the spacing between IGBT field limiting rings are 3 μm,4 μm,5 μm,6 μm,the number of IGBT field limiting rings are 4, the blocking voltage is able to reach 1 240 V.

关 键 词：绝缘栅双极型晶体管 平面穿通型 场限环 阻断能力 

分 类 号：TN32[电子电信—物理电子学]