0.18μm窄沟NMOS晶体管总剂量效应研究  

Total ionizing dose effect on 0.18 μm narrow-channel NMOS transistors

作　　者：吴雪[1,2,3] 陆妩[1,2] 王信[1,2,3] 席善斌[1,2,3] 郭旗[1,2] 李豫东[1,2] 

机构地区：[1]中国科学院特殊环境功能材料与器件重点实验室 新疆理化技术研究所,乌鲁木齐830011 [2]新疆电子信息材料与器件重点实验室,乌鲁木齐830011 [3]中国科学院大学,北京100049

出　　处：《物理学报》2013年第13期414-419,共6页Acta Physica Sinica

基　　金：模拟集成电路国家重点实验室(NLAIC)基金(批准号:9140C090402110C0906)资助的课题~~

摘　　要：为明确深亚微米NMOS器件抗辐照能力以及研究其加固措施,本文对0.18μm窄沟NMOS晶体管进行了60Coγ总剂量辐射效应研究.结果表明:和宽沟器件不同,阈值电压、跨导、漏源电导对总剂量辐照敏感,此现象被称之为辐射感生窄沟道效应;相比较栅氧化层,器件隔离氧化层对总剂量辐照更敏感;窄沟道NMOS器件阈值电压不仅和沟道耗尽区电荷有关,寄生晶体管耗尽区电荷对其影响也不可忽略,而辐照引起源漏之间寄生晶体管开启,形成漏电通道,正是导致漏电流、亚阈斜率等参数变化的原因.This paper describes the total ionizing dose effect on 0.18 um narrow-channel NMOS transistors which are exposed to a y- ray radiation. Electrical parameters such as threshold voltage, leakage current, trans-conductance, drain-source conductance, and subthreshold slope extracted from the I-V curves are analyzed pre-and post-irradiation. Results show that the threshold voltage, the trans-conductance, and the drain-source conductance are sensitive to radiation compared to wide-channel NMOS transistors--the effect we call radiation induced narrow channel effect（RINCE）. The amount of oxide-trapped charges and interface states which would degrade the threshold voltage and leakage current is induced in the STI oxide. The gate oxide is insensitive to irradiation. Combining the structure and process of devices, we finally discuss and analyze the above phenomenon in detail.

关 键 词：0 18μm 窄沟NMOS晶体管 60Coγ辐照 辐射感生窄沟道效应 

分 类 号：TN386.1[电子电信—物理电子学]