Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress  

作　　者：郑齐文 余学峰 崔江维 郭旗 丛忠超 张兴尧 邓伟 张孝富 吴正新 

机构地区：[1]Xinjiang Technical Institute of Physics&Chemistry,Chinese Academy of Sciences [2]Xinjiang Key Laboratory of Electric Information Materials and Devices [3]University of Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2013年第7期91-96,共6页半导体学报（英文版）

摘　　要：The hot-carrier effect charactenstic in a deep submicron partially depleted SOI NMOSFET is investigated. Obvious hot-carrier degradation is observed under off-state stress.The hot-carrier damage is supposed to be induced by the parasitic bipolar effects of a float SOI device.The back channel also suffers degradation from the hot carrier in the drain depletion region as well as the front channel.At low gate voltage,there is a hump in the sub-threshold curve of the back gate transistor,and it does not shift in the same way as the main transistor under stress.While under the same condition,there is a more severe hot-carrier effect with a shorter channel transistor. The reasons for those phenomena are discussed in detail.The hot-carrier effect charactenstic in a deep submicron partially depleted SOI NMOSFET is investigated. Obvious hot-carrier degradation is observed under off-state stress.The hot-carrier damage is supposed to be induced by the parasitic bipolar effects of a float SOI device.The back channel also suffers degradation from the hot carrier in the drain depletion region as well as the front channel.At low gate voltage,there is a hump in the sub-threshold curve of the back gate transistor,and it does not shift in the same way as the main transistor under stress.While under the same condition,there is a more severe hot-carrier effect with a shorter channel transistor. The reasons for those phenomena are discussed in detail.

关 键 词：SILICON-ON-INSULATOR hot-carrier effect HUMP back gate 

分 类 号：TN386[电子电信—物理电子学]