一种0.6μm SOI抗辐照运算放大器的版图设计  

Layout Design of Radiation Hardened Operational Amplifier Based on 0.6 μm SOI Technology

作　　者：徐佳丽[1] 杨阳[1] 黄文刚[1] 

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2013年第3期337-340,共4页Microelectronics

摘　　要：根据电路设计要求,对有特殊要求的器件,合理运用相关版图设计技术。针对器件的不同辐照效应,采用相应的抗辐射版图设计措施。流片测试结果显示,运算放大器的增益和输入失调电压等均达到设计要求。电路具有抗单粒子闩锁能力,抗总剂量大于3kGy(Si)。实现了一种抗辐照高性能运算放大器的版图设计。According to requirements of circuit design,relevant layout design technology was used for special devices.Specific measures for radiation hardness were taken in layout design for different radiation effects of the device.The circuit was fabricated in 0.6 μm SOI technology.Test results showed that parameters of the operational amplifier,such as gain and input offset voltage,met the design target.The circuit was capable of resisting single event latch-up and its total dose radiation hardness was above 3 kGy（Si）.

关 键 词：运算放大器 版图设计 总剂量辐射 单粒子闩锁 

分 类 号：TN432[电子电信—微电子学与固体电子学]