宽带低噪声放大器与ESD防护的协同设计  

Co-Design of Wideband Low Noise Amplifier with ESD Protection

作　　者：柯逸辰[1,2] 顾晓峰[1] 朱科翰[1] 高国平[2] 

机构地区：[1]江南大学电子工程系轻工过程先进控制教育部重点实验室,江苏无锡214122 [2]中国电子科技集团公司第五十八研究所,江苏无锡214035

出　　处：《微电子学》2013年第3期345-349,共5页Microelectronics

基　　金：国家自然科学基金资助项目(11074280);中央高校基本科研业务费专项资金资助项目(JUDCF12027;JUDCF12032);江苏高校优势学科建设工程资助项目(PAPD)

摘　　要：基于0.18μm CMOS工艺,介绍了一种UHF频段低噪声放大器(LNA)与静电放电(ESD)保护器件的协同设计和电路仿真方法。采用传输线脉冲测试系统,测得ESD二极管的正向热失效击穿电流为4.28A,等效于人体模型5.6kV;反向热失效击穿电流为0.2A,等效于人体模型500V。通过仿真,分析了ESD二极管的电阻、电容特性,给出了其在LNA正常工作情况下的等效电路;结合LNA电路仿真结果,比较了二极管寄生效应对LNA阻抗匹配、增益、噪声系数和线性度等指标的影响,验证了等效电路的正确性。Co-design and simulation method for UHF low noise amplifier （LNA） with ESD protection device was presented based on 0. 18 μm CMOS process. Both forward and reverse thermal breakdown currents of ESD diode were measured using transmission line pulse （TLP） test system, which were about 4. 28 A and 0. 2 A, equivalent to 5. 6 kV and 500 V of HBM ESD level, respectively. Resistance and capacitance characteristics of the ESD diode were simulated and analyzed, and equivalent circuit of the ESD diode under normal operating condition of LNA was presented. Parasitic effects of the diode on parameters of LNA, such as impedance matching, gain, noise figure and linearity, were compared based on simulation results of the circuit, and the equivalent circuit was verified for validity.

关 键 词：低噪声放大器 静电放电 二极管 传输线脉冲测试 人体模型 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN722.77