SiGe异质结双极晶体管的基区优化  

Base Region Optimization of SiGe Heterojunction Bipolar Transistors

作　　者：刘冬华 石晶 钱文生 

机构地区：[1]上海华虹NEC电子有限公司,上海201206

出　　处：《微电子学》2013年第3期431-434,共4页Microelectronics

基　　金：国家"十一.五"科技重大专项资助项目(2009ZX02303)

摘　　要：对应用于高频微波功率放大器的SiGe异质结双极晶体管(HBT)的基区进行了优化。研究发现,器件对基区Ge组分以及掺杂浓度十分敏感。采用重掺杂基区,适当提高Ge组分并形成合适的浓度分布,可以有效地改进SiGe HBT的直流特性,同时能够提高器件的特征频率。晶体管主要性能的提高使SiGe HBT技术在微波射频等高频电子领域得到更加广泛的应用。Base-region optimization of SiGe heterojunction bipolar transistors（HBT） for high-frequency microwave power amplifier was investigated.It was found that the device was sensitive to Ge component and doping concentration in the base-region.By employing a heavily doped base region in conjunction with high Ge content in proper profile,DC property of the SiGe HBT could be effectively improved,and its cut-off frequency could also be enhanced.The improvement of major performance of transistor makes SiGe HBT technology more essential in microwave/RF applications.

关 键 词：SIGE 异质结双极晶体管 基区优化 Ge组分 掺杂浓度 

分 类 号：TN431[电子电信—微电子学与固体电子学]