交联剂对PVP介质膜电学特性的影响  

Effects of Cross-linker on Electrical Properties of PVP

作　　者：邱禹 刘欢 余屯 钟传杰 

机构地区：[1]江南大学物联网学院,江苏无锡214122

出　　处：《半导体光电》2013年第3期428-431,435,共5页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(60776056);江南大学"创新计划"项目

摘　　要：通过分析加入不同交联剂质量分数的PVP绝缘膜MIS结构的电学特性,研究了交联剂质量对PVP薄膜电学特性的影响。交联剂PMF和PVP均溶于PGMEA,PVP绝缘膜通过溶液旋涂法由交联剂质量分数分别为1%、3%、5%、7%的四种溶液制成,四种溶液PVP的质量分数均为5%。对C-V特性、V-t特性和I-V特性的分析表明,在PVP质量分数为5%的溶液中,加入质量分数为5%的交联剂,退火之后形成的PVP绝缘膜陷阱密度最低,漏电流最小,仅为2.9×10-8 A/cm2。通过对J-V特性曲线的线性拟合发现,PVP绝缘膜在低电场情况下漏电机理为P-F效应,在高电场情况下PVP绝缘膜漏电机理存在由肖特基发射至空间电荷限制电流效应的转化。It is analyzed the electrical characteristics of PVP insulation layer in the MIS structure with different cross-linker weight percentages.The cross-linker PMF and PVP are dissolved in PGMEA,so PVP layers were spin coated with different cross-linker weight percentages of 1%,3%,5% and 7%,meanwhile the weight percentage PVP is 5% in all the four solutions.Analysis on C-V,V-t and I-V characteristic curves shows,it is only under the condition that the weight percentage of both PVP solution and cross-linker is 5%,the PVP insulation layer formed after annealing obtains the least interface trap density and minimum leakage current of 2.9×10-8 A/cm2.After J-V curve linear fitting,it is found that the leakage mechanism of PVP insulation layer is P-F effect under low electric field,and in high electric fields,the mechanism changes from Schottky emission to space charge limited current effect.

关 键 词：PVP 绝缘膜 有机薄膜晶体管 陷阱密度 漏电机理 

分 类 号：TM215.3[一般工业技术—材料科学与工程]