InSe的高压电输运性质研究  

Electrical transport properties of InSe under high pressure

作　　者：吴宝嘉[1,2] 李燕[1,2] 彭刚[2] 高春晓[2] 

机构地区：[1]延边大学理学院,延吉133002 [2]吉林大学,超硬材料国家重点实验室,长春130012

出　　处：《物理学报》2013年第14期97-101,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:11074094;11164031;51272224);国家重点基础研究发展计划(批准号:2011CB808204)资助的课题~~

摘　　要：高压下对InSe样品进行原位电阻率和霍尔效应测量.电阻率测量结果显示,样品在5—6GPa区间呈现金属特性,在12GPa的压力下发生由斜六方体层状结构到立方岩盐矿的结构相变,且具有金属特性.霍尔效应测量结果显示,样品在6.6GPa由p型半导体转变成n型半导体,电阻率随着压力的升高而逐渐下降是由于载流子浓度升高引起的.Electrical resistivity and Hall-effect in InSe under high pressure are accurately measured in situ. The measurement results of electrical resistivity and the temperature dependence of electrical resistivity show that InSe undergoes semiconductor-to-metal transition at 5–6 GPa and transforms from rhombohedral layered phase P 1 （InSe-I） to metallic rocksalt cubic phase P 3 （InSe-III） at 12 GPa. Certainly, the pressure-induced metallization of InSe results from the pressure-induced structural phase transition. In addition, Hall-effect measurements display the carrier transport behavior of InSe under pressure, which indicates that InSe undergoes a carrier-type inversion around 6.6 GPa and the increases of the carrier concentration is the dominant factor producing the decrease of the resistivity after 9.9 GPa.

关 键 词：INSE 高压 电阻率 霍尔效应 

分 类 号：TN304.2[电子电信—物理电子学]