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INSE: 作品数：92被引量：92H指数：5; 导出分析报告; 相关领域：电子电信理学更多>>; 相关作者：史迅刘学超段理陈寿面刘文富更多>>; 相关机构：中国科学院长安大学哈尔滨工业大学上海电机学院更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金中国博士后科学基金国家重点实验室开放基金王宽诚敎育基金更多>>

InSe单层中点缺陷的第一性原理研究: 《原子与分子物理学报》2025年第6期167-173,共7页何诗颖谢瑞恬刘娟邹代峰赵宇清许英廖雨洁; 国家自然科学基金(12204166);湖南省教育厅青年基金(20B219);湖南省自然科学基金(2022JJ30237);湖南科技大学科研启动基金(E51996,纵20240008)。; InSe是Ⅲ-Ⅵ族化合物中的主要成员,由于其具有优异的电学性能,在太阳能电池、固体电池组等领域受到广泛的关注.光电材料及器件的优良特性由电子结构决定,而Ⅲ-Ⅵ族化合物中的点缺陷对电子结构具有重要的调控,且单层InSe中点缺陷的Perdew...; 关键词：单层InSe 稳定性形成能点缺陷

Determination of the Bacteriological Quality of Weaning Porridges and Purees Consumed by Children Aged 6 to 24 Months at the Guinea Institute of Nutrition and Child Health: 《Food and Nutrition Sciences》2024年第12期1345-1356,共12页Nènè Adama Sow Aminatou Touré Salimatou Diallo Ahmadou Sadio Diallo Amadou Sylla; The feeding of children during weaning must be of good quality, this is essential, and it must not be a source of contamination to ensure the well-being of children. The objective of this work was to determine the bac...; 关键词：Bacteriological Quality Porridges Purees INSE of Guinea

本征缺陷对δ-InSe光电性质的影响: 《材料导报》2024年第23期7-13,共7页苗瑞霞张德栋谢妙春王业飞杨小峰; 国家自然科学基金(51302215,62105260,12004303)。; 作为一种典型的二维层状材料,二维InSe由于其独特的电学特性和较宽的带隙可调节范围,在新型二维电子和光电器件中具有广阔的应用前景。通过全局结构搜索和第一性原理计算发现的δ-InSe结构比已知的InSe结构具有更宽的带隙变化范围和更...; 关键词：第一性原理本征缺陷形成能电学性质光学性质

Innovative sterile male release strategies for Aedes mosquito control:progress and challenges in integrating evidence of mosquito population suppression with epidemiological impact: 《Infectious Diseases of Poverty》2024年第6期92-93,共2页Arya Rahul Appadurai Daniel Reegan A.N.Shriram Florence Fouque Manju Rahi; Background Aedes mosquitoes pose a significant global threat as vectors for several debilitating arboviruses,includ-ing dengue,Zika,yellow fever,and chikungunya.Their unique breeding habits,behavior,and daytime activi...; 关键词：Sterile insect technique Incompatible insect technique TRIAL AEDES Review

h-BN-assisted Metal Contact Transfer to InSe for Two-Dimensional Multifunctional Electronic Devices: 《Chinese Physics Letters》2024年第12期210-225,共16页Chijun Wei Nuertai Jiazila Xuanye Liu Peng Song Hui Gao Jiequn Sun Lihong Bao Xiao Lin Hong-Jun Gao; Metal contacts to two-dimensional(2D)semiconductors are crucial for determining the electrical performance of electronic devices.However,traditional three-dimensional metal deposition processes cause damage to 2D semi...; 关键词：COMPLEMENTARY SEMICONDUCTORS EXCEEDING

A low-cost digital 3D insect scanner: 《Information Processing in Agriculture》2024年第3期337-355,共19页Thanh-Nghi Doan Chuong V.Nguyen; supported by the National Geographic Society Exploration Grants(NGS-KOR-59552T-19).; Collections of biological specimens are essential in entomology laboratories for scientific knowledge and the characterization of natural varieties.It is vital to liberate useful information from physical collections ...; 关键词：3D reconstruction ENTOMOLOGY PHOTOGRAMMETRY Structure from motion

铝掺杂对硒化铟晶体结构与性能的影响: 《人工晶体学报》2024年第9期1528-1535,共8页郑权刘学超王浩朱新峰潘秀红陈锟邓伟杰汤美波徐浩吴鸿辉金敏; 国家重点研发计划(2021YFA0716304);上海市科技创新行动计划项目(22511100300,23DZ2201500);上海学术/技术研究负责人(23XD1421200);上海高校东方学者(TP2022122);载人空间站空间科学项目。; 硒化铟(InSe)是一种新型的窄禁带(1.3 eV)层状半导体,具有优异的塑性和电学性能,在新型电子和光电子器件中具有广泛应用前景。采用布里奇曼(Bridgman)法生长了未掺杂和铝掺杂的InSe晶体,通过能谱仪(EDS)和扫描电子显微镜(SEM)对制备材...; 关键词：InSe∶Al 布里奇曼法力学性能电学性能第一性原理晶体结构

Contrasting strategies of optimizing carrier concentration in bulk InSe for enhanced thermoelectric performance: 《Rare Metals》2024年第9期4425-4432,共8页Hao-Nan Shi Shu-Lin Bai Yu-Ping Wang Li-Zhong Su Qian Cao Cheng Chang Li-Dong Zhao; supported by the National Science Fund for Distinguished Young Scholars(No.51925101);the Tencent Xplorer Prize,the National Natural Science Foundation of China(Nos.52371208,52250090,52002042,51772012,51571007and 12374023);Beijing Municipal Natural Science Foundation(JQ18004);the 111 Project(B17002)。; Indium selenide(InSe),as a wide-bandgap semiconductor,has received extensive attention in the flexible electronics field in recent years due to its exceptional plasticity and promising thermoelectric performance.Howev...; 关键词：THERMOELECTRIC INSE Carrier concentration Bandgap Heterovalent doping

二维范德瓦耳斯异质结Cs_(3)X_(2)I_(9)/InSe(X=Bi,Sb)的光电性能被引量：1: 《物理学报》2024年第13期229-237,共9页熊祥杰钟防张资文陈芳罗婧澜赵宇清朱慧平蒋绍龙; 国家自然科学基金(批准号:12204166);湖南省自然科学基金(批准号:2024JJ5132);国家重点研发项目(批准号:2023YFB3611700);湖南科技大学科研启动基金(批准号:E51996)资助的课题。; 设计二维半导体范德瓦耳斯异质结是一种实现多功能微电子器件的有效策略.本文构筑了二维钙钛矿Cs_(3)X_(2)I_(9)(X=Bi,Sb)和铟锡InSe的范德瓦耳斯异质结Cs_(3)X_(2)I_(9)/InSe.基于密度泛函理论的第一性原理方法,计算了其几何、电子结...; 关键词：二维异质结光电转换效率第一性原理计算应变工程

基于InSe/MoTe_(2)异质结构的超灵敏宽光谱光电探测器: 《红外与毫米波学报》2024年第3期314-321,共8页邢艳辉贺雯馨韩梓硕关宝璐马海鑫马晓辉韩军时文华张宝顺吕伟明曾中明; the National Natural Science Foundation of China(60908012,61575008,61775007,61874145,62074011,62134008);National Key Research and Development Program of China(2018YFA0209000,2021YFC2203400,2021YFA1200804);the Beijing Natural Science Foun⁃dation(4172011,4202010);Beijing Nova Program(Z201100006820096)。; 基于光栅效应的二维材料垂直结构可实现高灵敏度和宽光谱光探测器。本文报告了一种基于硒化铟(InSe)/二碲化钼(MoTe_(2))垂直异质结构的高灵敏度光电探测器,该探测器在365~965 nm波长范围内具有出色的宽光谱探测能力。顶层的InSe用作调...; 关键词：二维材料宽带光电探测器光栅效应超灵敏

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